Semiconductor device

Abstract

A semiconductor device includes an active region including a channel region and a source / drain region adjacent to the channel region, a vertical stack of a plurality of channel features, a gate structure, a bottom dielectric structure, a source / drain structure, and a germanium layer. A vertical stack of a plurality of channel features is on the channel region. A gate structure is located around and over the vertical stack of channel features. The bottom dielectric structure is on the source / drain region. The source / drain structure is on the bottom dielectric structure. The germanium layer is located between the bottom dielectric structure and the source / drain region.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices, and more particularly to a method of forming a semiconductor oxide structure under a source / drain structure to obtain a pseudo-silicon-on-insulator structure. Background technique [0002] The semiconductor integrated circuit industry has experienced exponential growth. Technological advances in integrated circuit materials and design have resulted in each generation of integrated circuits having smaller and more complex circuits than the previous generation. In the evolution of integrated circuits, functional density (eg, the number of interconnect devices per unit chip area) generally increases as geometric dimensions (eg, the smallest component or circuit that can be produced by the fabrication process employed) shrink. Downsizing is often beneficial in increasing capacity and reducing associated costs. Shrinking dimensions also increase the complexity of handling and manufactur...

AI Technical Summary

Problems solved by technology

While the existing structure used for the tap unit was suitable for its intended purpose, it did not meet all requirements

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