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Testing apparatus

A test device and test technology, applied in the direction of measurement device, electromagnetic device manufacturing/processing, semiconductor/solid-state device testing/measurement, etc., can solve problems such as data destruction

Pending Publication Date: 2021-12-03
ADVANTEST CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In other words, if the state of the magnetization of the MTJ changes due to an external magnetic field, the data is destroyed

Method used

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Experimental program
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Embodiment approach

[0041] Hereinafter, the present disclosure will be described based on preferred embodiments with reference to the drawings. The same or equivalent constituents, members, and processes shown in the drawings are given the same symbols, and overlapping descriptions are appropriately omitted. Furthermore, the embodiments are not limited to the disclosure but are examples, and all the features and combinations described in the embodiments are not necessarily the disclosed substantive features and combinations.

Embodiment approach 1

[0043] figure 1 is a diagram showing the wafer 10 to be tested. A plurality of devices under test 12 are formed on the wafer under test 10 , and chips of the devices under test 12 are obtained by dicing. In this embodiment, the device under test 12 is an MRAM, and has an MTJ constituting a single MRAM, its peripheral circuits, and a plurality of pins (electrodes) for contact. A dotted line 14 indicates a range (referred to as a co-measurement area) that can be measured simultaneously by the test apparatus 100E described later. Usually, the test apparatus 100E simultaneously measures a plurality of (for example, 256, 128, etc.) devices 12 under test.

[0044] figure 2 It is a block diagram of the test apparatus 100E of Embodiment 1. The test device 100E is for figure 1 A wafer inspection device for testing the tested wafer 10 . The test device 100E includes a tester main body 110 , a test head 120 , a stage 130 , a magnetic field application device 140 , a wafer connectio...

Embodiment approach 2

[0059] Figure 5 It is a figure which shows the test apparatus 100 of Embodiment 2. The test device 100 can measure the external magnetic field B generated by the magnetic field applying device 140 in the diagnostic process. EX . The testing device 100 is used together with the diagnostic wafer 170 and the diagnostic probe card 180 for diagnosis and calibration of the magnetic field applying device 140 .

[0060] Figure 6 is a diagram showing a diagnostic wafer 170 . The diagnostic wafer 170 is placed on the stage 130 in place of the test wafer 10 in the diagnostic process of the testing apparatus 100 . The magnetic field B generated by the magnetic field applying device 140 is formed on the diagnostic wafer 170 . EX A plurality of magnetic detection units 172. exist Figure 6 , the co-measurement area 14 is indicated by a dotted line. The same measurement area 14 can be said to ensure a uniform external magnetic field B EX the range of application. The material of ...

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PUM

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Abstract

A testing apparatus 100 for testing a wafer 10 to be tested, on which is formed a device 12 to be tested, including a magnetoresistive memory or a magnetic sensor. The wafer 10 be tested is placed on a stage 130 in a testing step. A probe card 160 for testing is configured so as to be probe-contactable with respect to the wafer 10 to be tested in the testing step. A wafer connection HiFix 150 is provided between the probe card 160 for testing and a test head 120. A magnetic field application device 140 is provided to the wafer connection HiFix 150 and applies a magnetic field BEX to the wafer 10 to be tested in the testing step.

Description

technical field [0001] The present disclosure relates to semiconductor test equipment. Background technique [0002] As a next-generation memory, a magnetoresistive memory (MRAM: Magnetoresistive Random Access Memory) has been developed. A magnetoresistive memory records information by using the magnetization state of a magnetic tunnel junction (MTJ: Magnetic Tunnel Junction), and thus is nonvolatile, unlike a memory that uses charges such as SRAM (Static RAM) and DRAM (Dynamic RAM). [0003] When data is written in the MRAM, it is necessary to change the magnetization state of the MTJ by applying a magnetic field to the MTJ. In other words, if the state of magnetization of the MTJ changes due to an external magnetic field, data is destroyed. Therefore, MRAM includes magnetic characteristics such as externally applied magnetic fields in addition to electrical characteristics, and after the specification is determined, MRAM needs to test the magnetic characteristics before ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L27/22H10N50/01H10N50/10
CPCH01L22/14H10B61/00H01L22/00G01R33/072G01R33/091G01R33/0076G01R33/0035H10N50/01G01R33/02G01R33/07G01R31/2886H10N50/10G01R31/2863G01R31/2889
Inventor 渡边直良佐藤茂行内海良一
Owner ADVANTEST CORP