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Semiconductor device

A semiconductor and source technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve the problems of occupying metal line layer space, increasing costs, and affecting wiring

Pending Publication Date: 2021-12-07
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Butt joints are not self-aligning and require additional lithography operations, which can lead to increased cost
Also, butt joints can take up space in metallization layers and interfere with routing

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0090] The present disclosure provides many different embodiments, or examples, for implementing the different features of the invention. The following disclosure describes specific embodiments of various components and their arrangements to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if the present disclosure describes that a first feature is formed on or above a second feature, it means that it may include embodiments in which the first feature is in direct contact with the second feature, and may also include Embodiments in which additional features are formed between the above-mentioned first feature and the above-mentioned second feature such that the above-mentioned first feature and the second feature may not be in direct contact. In addition, the same reference signs and / or symbols may be reused in different embodiments of the present disclosure below. These repetitions are for simplicity and clarity and ...

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Abstract

The embodiment of the invention provides a semiconductor device. The device comprises a gate extension structure, a first source / drain feature and a second source / drain feature, vertical stacks of channel members extending between the first source / drain feature and the second source / drain feature in one direction, and a gate structure surrounding each of the vertical stacks of channel members. The gate extension structure directly contacts the first source / drain feature.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device, and more particularly to a semiconductor device having a connection structure connecting a source / drain feature of one transistor to a gate structure of another transistor. Background technique [0002] The semiconductor integrated circuit (integrated circuit; IC) industry is growing exponentially. Technological advances in IC materials and IC design have produced multiple IC generations, each IC generation having smaller and more complex circuits than the previous IC generation. During IC development, geometry (eg, the smallest component (or circuit) a process can make) decreases, while functional density (eg, the number of connected components per chip area) typically increases. This miniaturization process provides advantages by increasing production efficiency and reducing associated costs. This scaling also increases the complexity of the IC process and manufacturing. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/088H01L27/092H01L21/8234H01L21/8238H01L27/11
CPCH01L27/0886H01L27/0924H01L21/823475H01L21/823431H01L21/823871H01L21/823821H10B10/12H01L21/76897H01L29/78696H01L29/775H01L29/42392H01L29/66545H01L29/0673H01L29/41766H01L29/0653H01L29/0847B82Y10/00H01L29/66439H01L21/76895H01L21/743H01L21/823437H01L21/02126H01L21/0214H01L21/02164H01L21/02167H01L21/0217H01L21/02271H01L21/02532H01L21/02603H01L21/823807H01L21/823814H01L21/823864H01L21/823878H01L27/092H01L29/0649H01L29/66553H01L29/66636H01L29/66742H01L29/78618H10B10/125
Inventor 杨智铨包家豪林佑宽洪连嵘王屏薇林士豪
Owner TAIWAN SEMICON MFG CO LTD