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Vertical cavity surface emitting laser and preparation method thereof

A vertical cavity surface emission and laser technology, applied in the field of lasers, can solve problems such as poor lateral heat dissipation performance, and achieve the effects of reducing operating temperature, improving heat dissipation capacity, and avoiding adverse effects

Active Publication Date: 2021-12-10
SUZHOU EVERBRIGHT PHOTONICS CO LTD +1
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the defect of poor lateral heat dissipation performance of the existing vertical cavity surface emitting laser, thereby providing a vertical cavity surface emitting laser Laser and its preparation method

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  • Vertical cavity surface emitting laser and preparation method thereof
  • Vertical cavity surface emitting laser and preparation method thereof
  • Vertical cavity surface emitting laser and preparation method thereof

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Embodiment Construction

[0038] As mentioned in the background art, the lateral heat dissipation performance of existing vertical cavity surface emitting lasers is poor, and heat accumulation is prone to occur, thus adversely affecting device performance.

[0039] like Figure 1-Figure 2 As shown, a vertical cavity surface emitting laser includes: a substrate 1'; an epitaxial structure 2' disposed on one side of the substrate 1', and the epitaxial structure 2' includes: a first Bragg reflector stacked from bottom to top Mirror layer 24', active layer 23' and second Bragg mirror layer 22', the first Bragg mirror layer 24' is in contact with the substrate 1', and the epitaxial structure 2' is provided with penetrating to Several grooves 21' inside the first Bragg reflector layer 24' to separate the epitaxial structure 2' into several mesa structures; a current confinement layer (not shown in the figure) located in the mesa structure, so The current confinement layer is ring-shaped and located between t...

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Abstract

The invention provides a vertical cavity surface emitting laser and a preparation method thereof, and the vertical cavity surface emitting laser comprises a substrate and an epitaxial structure; the substrate comprises a plurality of spaced light-emitting regions and connecting regions which are located between the adjacent light-emitting regions and are adjacent to the light-emitting regions; the epitaxial structure is arranged in one side of the light-emitting region and the connecting region of the substrate, the epitaxial structure comprises a first Bragg reflector layer and an active layer which are arranged in a stacked mode, the first Bragg reflector layer is located between the substrate and the active layer, a groove is formed in the epitaxial structure on part of the connecting region, and the groove penetrates through the first Bragg reflector layer with partial thickness. The vertical cavity surface emitting laser has high transverse heat dissipation capability, and can avoid adverse effects on device performance caused by heat accumulation.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a vertical cavity surface emitting laser and a preparation method thereof. Background technique [0002] Vertical-Cavity Surface-Emitting Laser (VCSEL for short) is a new type of semiconductor laser whose laser emission direction is perpendicular to the chip surface. Compared with edge emitting lasers (EEL for short), vertical cavity surface emitting lasers have many advantages, including low threshold current, good stability, long life, circular symmetry of spot, high fiber coupling efficiency, high modulation rate, and easy 2D integration etc. With the large-scale application of vertical cavity surface emitting lasers in face recognition, lidar, etc., vertical cavity surface emitting lasers have attracted more and more attention. [0003] However, the lateral heat dissipation performance of existing vertical cavity surface emitting lasers is poor, and heat accumulation is pron...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/024
CPCH01S5/18311H01S5/18361H01S5/02461
Inventor 刘恒王俊邱平平孙义忠李熙贤肖垚苗霈
Owner SUZHOU EVERBRIGHT PHOTONICS CO LTD
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