Wear leveling method suitable for Nor Flash data storage and storage device

Abstract

The invention relates to a wear leveling method suitable for NorFlash data storage. The wear leveling method comprises a storage page distribution method for a memory, an initialization method and a data writing and reading method. The storage page distribution method comprises the step of dividing a storage space into two storage pages; the initialization method comprises the steps of selecting one storage page as an active page, and selecting the other storage page as a standby page, and updating the value of a global variable in a memory; the data writing method comprises the steps that whether the residual storage space of an active page is not smaller than the space needed by data needing to be written or not is judged, if not, the data needing to be stored are written from a data offset address, and if yes, a standby page is switched into the active page, and the active page is rewritten; the data reading method comprises the steps of obtaining related parameters of data needing to be read, searching data in an active page from back to front, and reading the data which is searched firstly and meets the requirements of the related parameters into a memory. The invention further relates to a storage device used for executing the method.

Description

technical field [0001] The invention relates to a non-volatile flash memory technology, in particular to a wear leveling method and a storage device suitable for Nor Flash data storage. Background technique [0002] Nor Flash is a non-volatile flash memory technology, which is characterized by in-chip execution (XIP, eXecute InPlace), so that applications can run directly in the Flash memory without having to read the code into the system RAM. The transmission efficiency of Flash memory is very high, and it is very cost-effective in the small capacity of 1-4MB, but it is generally used to store programs or data with a small amount of code. [0003] When writing data in Nor Flash, the common practice is to write data at a fixed address. When the data at this location needs to be changed, it needs to be erased first and then written. The data can only be written from 1 to 0, and cannot be written from 0 to 1. After erasing, all Norflash data becomes 0xFF. When faced with data...

AI Technical Summary

Problems solved by technology

[0003] When writing data in Nor Flash, the common practice is to write data at a fixed address. When the data at this location needs to be changed, it needs to be erased first and then written. The data can only be written from 1 to 0, and cannot be written from 0 to 1. After erasing, all Norflash data becomes 0xFF. When faced with data that needs to be changed frequently, the very low writing and erasing speed of Nor Flash greatly affects its performance. The write life is generally about 100,000 times. When the number of times exceeds this limit, there will be a possibility of bad blocks. If you continue to rewrite the stored data at this time, the correctness cannot be guaranteed.

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