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Semiconductor device and forming method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their formation

Pending Publication Date: 2021-12-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While conventional epitaxial components are often adequate for their intended purpose, they are not satisfactory in all respects

Method used

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  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

Examples

Experimental program
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Embodiment Construction

[0011] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component on or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component. components so that the first component and the second component may not be in direct contact with each other. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relat...

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Abstract

Semiconductor devices and methods of forming the same are provided. The semiconductor device according to one embodiment of the present invention comprises: a plurality of channel members disposed over a substrate; a plurality of internal spacer components interleaved with the plurality of channel members; a gate structure wrapping each of the plurality of channel members; and a source / drain feature. The source / drain feature includes: a first epitaxial layer in contact with the substrate and the plurality of channel members; and a second epitaxial layer in contact with the first epitaxial layer and the plurality of internal spacer features. The first epitaxial layer and the second epitaxial layer include silicon germanium. The germanium content of the second epitaxial layer is greater than that of the first epitaxial layer.

Description

technical field [0001] Embodiments of the present application relate to semiconductor devices and methods of forming the same. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced multiple generations of ICs, each with smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (ie, the number of interconnected devices per chip area) has generally increased, while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) has decreased. This scaled-down process often provides benefits through increased production efficiency and reduced associated costs. This shrinking also increases the complexity of handling and manufacturing ICs. [0003] For example, as integrated circuit (IC) technology has evolved to smaller technology nodes, multi-gate metal-oxid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/08H01L29/417H01L29/423H01L29/78H01L21/336
CPCH01L29/0847H01L29/41791H01L29/4232H01L29/785H01L29/66795H01L29/66545H01L29/7848H01L29/165H01L29/66439H01L29/42376H01L29/0673H01L29/775H01L29/1079B82Y10/00H01L29/78696H01L29/42392H01L29/66636H01L29/78618H01L29/0665H01L29/161H01L29/66742H01L21/0259H01L21/02532H01L29/66553
Inventor 朱峯庆温宗锜林家彬
Owner TAIWAN SEMICON MFG CO LTD