A kind of semiconductor device and its preparation method

Abstract

The invention discloses a semiconductor device and a preparation method thereof, and relates to the field of semiconductor technology. The semiconductor device of the invention includes a substrate and a semiconductor layer arranged on the substrate. The semiconductor layer is divided into an active area and a The passive area; the semiconductor layer in the active area is provided with source, drain, gate, source field plate and ground back hole, and the semiconductor layer in the passive area is provided with a drain pad and a gate pad. plate, the drain is electrically connected to the drain pad, one end of the gate is connected to the gate pad through the source field plate, and the other end is located between the source and the drain, and the gate pad is at least partially arranged in the passive area, The source is grounded through the ground back hole, and the semiconductor layer in the active region is also provided with a Schottky junction. The positive electrode of the Schottky junction is electrically connected to the gate pad, and the negative electrode is electrically connected to the source through a two-dimensional electron gas. , the forward turn-on voltage of the Schottky junction is greater than the forward turn-on voltage of the gate. The semiconductor device provided by the invention can realize self-protection.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] GaN high electron mobility transistor is the core component of the 5G communication system and the core component of the power amplifier of the communication base station. It plays a vital role in the entire communication system. Its long-term stability and reliability are crucial to the normal operation of the communication system. . GaN high electron mobility transistors need to provide a DC negative bias voltage on the gate during actual operation, and the input RF signal and the DC negative bias voltage of the gate control the drain current in real time, thereby achieving RF signal amplification. However, in the natural environment, there are interference or unstable factors in the system or power supply, which causes the instantaneous signal input to the power amplifier to be too l...

AI Technical Summary

Problems solved by technology

During the operation of the base station, once there is an interference signal or a glitch signal in the power supply, it will cause the gate Schottky junction of the GaN high electron mobility transistor to turn on in the forward direction, the gate Schottky diode is turned on, and the GaN high electron mobility Mobility transistor damage

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