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Semiconductor structure and preparation method thereof

A semiconductor and light-emitting structure technology, applied in semiconductor devices, semiconductor lasers, laser parts, etc., and can solve problems such as cracks

Pending Publication Date: 2021-12-17
ENKRIS SEMICON
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Problems solved by technology

[0003] Gallium nitride-based resonant cavity light-emitting devices, including resonant cavity light-emitting diodes and vertical cavity surface-emitting lasers, usually adopt a DBR (distributed Bragg reflector, distributed Bragg reflection) structure, and the first DBR structure of Al(Ga)N / GaN is because The stress generated by lattice mismatch can cause problems such as cracks

Method used

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  • Semiconductor structure and preparation method thereof
  • Semiconductor structure and preparation method thereof
  • Semiconductor structure and preparation method thereof

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Embodiment Construction

[0016] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0017] It should be noted that like numerals and letters denote similar items in the following figures, therefore, once an item is defined in one figure, it does not require further definition and explanation in subsequent figures. Meanwhile, in the description of the present invention, the terms "first", "second", etc. are only used to distinguish descriptions, and cannot be understood as indicating or implying relative importance. In the description of the emb...

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Abstract

The invention provides a semiconductor structure and a preparation method thereof. The preparation method of the semiconductor structure comprises the following steps: preparing a buffer layer on a substrate; preparing a mask layer on the buffer layer; patterning the mask layer to enable part of the buffer layer to be exposed; preparing a first DBR structure on the part, exposed by the mask layer, of the buffer layer; and preparing a light-emitting structure on the first DBR structure. The patterned mask layer can improve the growth quality of the first DBR structure, and facilitates the preparation of a subsequent light-emitting structure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a preparation method thereof. Background technique [0002] As a typical representative of the third-generation semiconductor materials, group III nitrides with wide bandgap semiconductor materials have excellent characteristics such as large bandgap, high voltage resistance, high temperature resistance, high electron saturation speed and drift speed, and easy formation of high-quality heterostructures. It is very suitable for manufacturing high-temperature, high-frequency, high-power electronic devices. [0003] Gallium nitride-based resonant cavity light-emitting devices, including resonant cavity light-emitting diodes and vertical cavity surface-emitting lasers, usually adopt a DBR (distributed Bragg reflector, distributed Bragg reflection) structure, and the first DBR structure of Al(Ga)N / GaN is because The stress generated by the lattice...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/10H01L33/12H01S5/183H01S5/187
CPCH01L33/0075H01L33/007H01L33/06H01L33/12H01L33/10H01S5/18366H01S5/187H01S5/183H01L33/00
Inventor 朱丹丹程凯
Owner ENKRIS SEMICON