Two-phase micro-channel heat dissipation device for thermal management of high-power IGBT module

Abstract

The invention discloses a two-phase micro-channel heat dissipation device for thermal management of a high-power IGBT module. The device comprises an end cover plate and a micro-channel plate base, and is characterized in that the end cover plate is fixedly connected with the micro-channel plate base, a liquid inlet and a liquid outlet are formed in the two sides of the end cover plate respectively, a slope-shaped gradually-deepened groove is formed in the position, between the liquid inlet and the liquid outlet, of the surface of the end cover plate, an inlet buffer pool communicated with the liquid inlet and an outlet buffer pool communicated with the liquid outlet are arranged on the two sides of the micro-channel plate base respectively, a heating source is arranged on the surface, away from the end cover plate, of the micro-channel plate base, the inlet buffer pool is communicated with the outlet buffer pool through a parallel micro-channel group, the slope-shaped gradually-deepened groove is arranged right opposite to the parallel micro-channel group, and the depth of the slope-shaped gradually-deepened groove is gradually deepened in the direction from the liquid inlet to the liquid outlet. The device has the advantages that the problem of flow instability in the flow boiling process is inhibited to a great extent by utilizing various structures, and the device is convenient to process and low in cost and has great advantages in market popularization.

Description

technical field [0001] The invention belongs to the technical field of microelectronic cooling, and in particular relates to a two-phase microchannel cooling device used for thermal management of high-power IGBT modules. Background technique [0002] Under the influence of the market, IGBT modules are developing in the direction of high power and integration. High-power IGBT modules will generate more power loss and generate more heat during the working process, which makes the heat dissipation problem more severe. The instantaneous heat flux density of high-power IGBT chips can reach 500W / cm 2 , If the heat cannot be transferred in time, it is very likely to cause the chip to burn or the solder layer to separate and break, the welding wire to lift, the chip crack and other problems, resulting in the IGBT module not working properly. Not only that, but the large temperature difference inside the module will also cause thermal stress to cause thermal runaway and reduce the r...

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Problems solved by technology

[0013] Aiming at the above-mentioned problems existing in the prior art, the present invention proposes a two-phase microchannel cooling device for thermal management of high-power IGBT modules to solve the problem of flow instability. The technical solutions adopted are as follows:

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