Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Logic device, method, magnetic memory and computer equipment

A logic device and magnetoelectric technology, applied in the semiconductor field, can solve the problems of high power consumption, inapplicability, low reliability, etc., and achieve the effect of increasing device density, facilitating shrinkage, and reducing logic errors.

Pending Publication Date: 2021-12-24
BEIHANG UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] As the size of the transistor has approached the physical limit, the high power consumption and low reliability caused by the quantum tunneling effect are limiting the further shrinkage of the device, and Moore's Law, which was effective in the past, is gradually not applicable to the development of the semiconductor industry today.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Logic device, method, magnetic memory and computer equipment
  • Logic device, method, magnetic memory and computer equipment
  • Logic device, method, magnetic memory and computer equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0031] According to one aspect of the present invention, this embodiment discloses a logic device for reading and writing data, such as image 3 (a) to image 3 As shown in (c), it includes: a coupling layer, the coupling layer includes a conductor, a ferromagnetic block located between each section of conductor, wherein the ferromagnetic block has perpendicular magnetic anisotropy, the ferromagnetic block and The conductors are insulated; the magnetoelectric...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

According to a logic device, a method, a magnetic memory and a computer equipment provided by the invention, the ferromagnet with vertical magnetic anisotropy is introduced, and compared with a ferromagnet with in-plane magnetic anisotropy, the ferromagnet with vertical magnetic anisotropy is higher in thermal stability, so that the reduction of the device is facilitated, and the density of the device is increased; meanwhile, the whole ferromagnetic body is in contact with the magnetoelectric material, and therefore it can be guaranteed that the whole ferromagnetic moment is turned over consistently, logic errors are reduced, and turning delay is reduced; furthermore, the device provided by the invention is simpler in structure, the reading unit of the device is only composed of a ferromagnetic material with perpendicular magnetic anisotropy, and a high spin-orbit coupling material is not needed, so that the density of the device is increased, the process difficulty is reduced, and the manufacturing cost of the device is saved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a logic device, method, magnetic memory and computer equipment. Background technique [0002] As the size of transistors has approached the physical limit, the high power consumption and low reliability caused by the quantum tunneling effect are limiting the further shrinkage of devices, and Moore's Law, which was effective in the past, is gradually not applicable to the development of the semiconductor industry today. In this context, spintronic devices, which use the intrinsic spin of electrons instead of charges as information carriers, are expected to replace traditional CMOS devices and continue Moore's Law. For spintronic devices, the manipulation of the magnetization direction and the detection of the magnetization state are the key to realize the logic operation. Contents of the invention [0003] An object of the present invention is to provide a logic device f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L43/08H01L43/12
CPCH10N50/01H10N50/10
Inventor 张悦何宇张昆赵巍胜
Owner BEIHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products