Spatial isolation atomic layer deposition device

A technology of atomic layer deposition and space isolation, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of high cost, large device height, and high processing

Active Publication Date: 2021-12-28
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method will make the height of the device larger, and the internal flow channel structure will be more complicated, making the proces...

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  • Spatial isolation atomic layer deposition device
  • Spatial isolation atomic layer deposition device
  • Spatial isolation atomic layer deposition device

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Embodiment Construction

[0032] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0033] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counte...

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Abstract

The invention relates to a spatial isolation atomic layer deposition device. The spatial isolation atomic layer deposition device comprises a shell, a partition plate, an air inlet and an air outlet, wherein the interior of the shell is hollow to form an air duct; the partition plate is located in the shell; the portion, located on one side of the partition plate, in the air duct is a main air duct, and the portion, located on the other side of the partition plate, in the air duct is a static pressure chamber; a slit is formed in the partition plate, and the main air duct communicates with the static pressure chamber through the slit; the flowing direction of air in the length direction of the main air duct serves as the first direction, and the slit comprises a plurality of intervals in the first direction; the air inlet is formed in the shell and communicates with the main air duct; the air outlet is formed in the shell and communicates with the static pressure chamber, and the air outlet extends in the first direction; and in the area close to the tail end in the first direction, the width of the slit in at least part of the intervals is larger than that of the slit in the next interval, so that the amount of gas flowing into the static pressure chamber through the slit in the main air duct in all the intervals is equal.

Description

technical field [0001] The invention relates to the technical field of atomic layer deposition, in particular to a space-isolated atomic layer deposition device. Background technique [0002] Atomic layer deposition is an ultra-thin film preparation technology, through which substances can be plated layer by layer on the surface of a substrate in the form of a single atomic film. The thickness of the film formed during atomic layer deposition is very small, reaching the nanometer level, and the consistency is good. Therefore, it is widely used in the fields of micro-nano electronic devices and solar cells. In related technologies, in some atomic layer deposition devices, the gas flowing into the gas inlet is split multiple times to increase the number of gas jets and nozzles, so that the length that the gas jets can cover increases, thereby achieving large-area deposition. However, this way will make the height of the device larger, and the internal flow channel structure w...

Claims

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Application Information

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IPC IPC(8): C23C16/455
CPCC23C16/45544C23C16/45591C23C16/45578
Inventor 陈蓉聂煜峰杨帆李邹霜邓匡举
Owner HUAZHONG UNIV OF SCI & TECH
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