Nucleation-free tungsten deposition

Abstract

Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal reducing agent layer of boron (B) and / or silicon (Si) on a substrate. The substrate generally includes a feature to be filled with tungsten with the reducing agent layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a fluorine-containing tungsten precursor, which is reduced by the reducing agent layer to form a layer of elemental tungsten. The conformal reducing agent layer is converted to a conformal tungsten layer.

Description

[0001] incorporated by reference [0002] The PCT application form is filed as part of this application at the same time as this specification. Each application from which this application claims the benefit or priority, as identified in the concurrently filed PCT application form, is hereby incorporated by reference in its entirety for all purposes. Background technique [0003] Depositing conductive materials such as tungsten films is an important part of many semiconductor manufacturing processes. These materials can be used as horizontal interconnects, vias between adjacent metal layers, contacts between metal layers and devices on silicon substrates, and high aspect ratio features. Deposition of thin tungsten films has become a challenge as devices shrink and more complex patterned architectures are used in the industry. These challenges include depositing low-resistance films with good step coverage. [0004] The background and contextual description included herein i...

AI Technical Summary

Problems solved by technology

Deposition of thin tungsten films becomes a challenge as devices shrink and more complex patterned architectures are used in the industry

These challenges include depositing low resistance films with good step coverage

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