N-type silicon carbide single crystal wafer stripping method and stripping device

Abstract

The invention relates to the field of silicon carbide single crystal wafer manufacturing, and discloses an n-type silicon carbide single crystal wafer stripping method and stripping device. The n-type silicon carbide single crystal wafer stripping method comprises the steps of providing an n-type silicon carbide crystal ingot comprising an amorphous layer and a single crystal layer located on the surface of the amorphous layer; soaking the n-type silicon carbide crystal ingot into an etching solution, taking the n-type silicon carbide crystal ingot as an anode based on a three-electrode system, and arranging a cathode and a reference electrode in the etching solution; irradiating the n-type silicon carbide crystal ingot by using incident light with a specific wavelength, wherein the incident light irradiates the surface of the amorphous layer to form a photo-generated hole-electron pair; and in the irradiation process, providing positive constant potential for the n-type silicon carbide crystal ingot, so as to enable photo-induced electrons on the surface of the amorphous layer to be transferred to a cathode along current to react with etching liquid, and the etching liquid to selectively etch the surface of the amorphous layer, and further to achieve stripping of the single crystal layer and obtain the n-type silicon carbide single crystal wafer. The surface or subsurface of the single crystal wafer obtained by the method has no damage layer and no stress residue, and is simple to operate and low in cost.

Description

technical field [0001] The invention relates to the technical field of single wafer manufacturing, in particular to an n-type silicon carbide single wafer peeling method and a peeling device. Background technique [0002] At present, in the silicon carbide ingot slicing process, the "laser cutting method" is a new method of producing silicon carbide single wafers, which is expected to replace the traditional "diamond wire cutting method". In a dry environment, the laser is focused on the cutting surface parallel to the basal plane of the silicon carbide ingot, and local heating generates high-density dislocations, forming a thin layer of amorphous silicon, An amorphous layer of amorphous carbon and amorphous silicon carbide, wherein the thickness of the amorphous layer is about 50 μm; and then a silicon carbide single wafer is obtained by mechanically peeling off the amorphous layer. [0003] The method has less dicing loss and fewer processing traces on the surface or subs...

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the problem of poor effect of existing strippi

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