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Method for preparing QLED device, QLED device and display device

A device and patterned layer technology, applied in the field of QLED devices and display devices, can solve the problems that QLED devices and display devices need to be improved

Pending Publication Date: 2022-01-07
BEIJING BOE TECH DEV CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Therefore, the current method for preparing QLED devices, QLED devices and display devices still needs to be improved

Method used

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  • Method for preparing QLED device, QLED device and display device
  • Method for preparing QLED device, QLED device and display device
  • Method for preparing QLED device, QLED device and display device

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0139] 1. The cathode is formed on the substrate, the substrate is conductive glass, and the material for forming the cathode is ITO.

[0140] 2. An electron transport layer is formed on the side with the cathode on the substrate, and the material for forming the electron transport layer is zinc oxide nanoparticles. Specifically, 100 microliters of 20 mg / mL zinc oxide nanoparticles are dropped onto the above substrate, Set the speed of the homogenizer to 1500rpm and spin coat to form a film.

[0141] 3. Preparation of red QLED devices includes:

[0142] The first patterned layer is formed on the side of the electron transport layer away from the substrate, and the structural formula of the material forming the first patterned layer is as formula (1)

[0143]

[0144] The first color light-emitting layer is formed on the side of the first patterned layer away from the substrate. Specifically, the first color is red, and the material forming the first color light-emitting la...

experiment example 2

[0153] 1. The cathode is formed on the substrate, the substrate is conductive glass, and the material for forming the cathode is ITO.

[0154] 2. An electron transport layer is formed on the side with the cathode on the substrate. The material forming the electron transport layer is zinc oxide sol-gel. Specifically, 2g of zinc acetate is added to a mixed solvent containing 10mL of ethanolamine and 10mL of n-butanol, Spin coating to form a film at a speed of 3000 rpm, and heat on a hot stage at 200°C to form a film.

[0155] 3. Preparation of red QLED devices includes:

[0156] The fourth patterned layer is formed on the side of the electron transport layer away from the substrate, and the material structure formula of the fourth patterned layer is as formula (2)

[0157]

[0158] A fourth color light-emitting layer is formed on the side of the fourth patterned layer away from the substrate. Specifically, the fourth color is red, and the material forming the fourth color li...

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Abstract

The invention provides a method for preparing a QLED device, the QLED device and a display device, and the method comprises the steps: providing a substrate, forming a patterned layer on one side of the substrate, forming a light-emitting layer on one side, far away from the substrate, of the patterned layer, and carrying out the illumination processing of a preset region on the substrate from one side, far away from the patterned layer, of the light-emitting layer, changing the dissolvability of the patterned layer in the preset area, removing the patterned layer and the light-emitting layer in the non-preset area or the preset area on the substrate, and obtaining the QLED device, wherein the material for forming the patterned layer is a micromolecule cross-linking material or a polymer decomposition material. Therefore, the high-resolution QLED device is prepared through a simple and convenient method.

Description

technical field [0001] The present invention relates to the display field, in particular to a method for preparing a QLED device, a QLED device and a display device. Background technique [0002] AMOLED is recognized as the most promising next-generation display product to replace LCD, but with the improvement of consumers' consumption level, high-resolution products have become the key development direction of display products, and it is difficult for high-resolution AMOLED products to compete with LCD. compete. Even if the method of printing and printing is used to replace the process of mask evaporation to prepare the organic light-emitting layer, the resolution of the obtained display panel is extremely limited. High-resolution AMOLED products face problems such as high technical difficulty, low product yield, and high commodity prices. With the in-depth development of quantum dot technology, the research on quantum dot light-emitting diodes (Quantum DotLight Emitting ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50H01L27/32
CPCH10K59/12H10K50/115H10K50/125H10K71/00
Inventor 王好伟
Owner BEIJING BOE TECH DEV CO LTD
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