High-voltage isolation structure and manufacturing method thereof

Abstract

The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a high-voltage isolation structure and a manufacturing method thereof. The method comprises the following steps of: providing a first conductive type substrate of a base layer; performing first conductive type ion implantation with first implantation energy to form a first conduction type buried layer A part; carrying out first conductive type ion implantation with second implantation energy to form a first conductive type buried layer B part primary structure, and enabling the first conductive type buried layer B part primary structure to downwards contact with the first conductive type buried layer A part; wherein the first injection energy is higher than the second injection energy; growing a second conductive type epitaxial layer on the first conductive type substrate, and expanding the primary structure of the first conductive type buried layer B part into the second conductive type epitaxial layer to form the first conductive type buried layer B part; and forming a first conductive type well region through first conductive type ion implantation, thus achieving that the first conductive type well region is downwards contacted with the first conductive type buried layer B part. The high-voltage isolation structure is formed through the method.

Description

technical field [0001] The present application relates to the technical field of semiconductor integrated circuit manufacturing, and in particular to a high-voltage isolation structure and a manufacturing method thereof. Background technique [0002] In the half-bridge drive circuit, the high-voltage device and the low-voltage device need to be integrated on the same chip, and the voltage converter (Level Shift, LS) is designed between the high-voltage device and the low-voltage device to switch the input signal from one voltage domain to Another voltage domain to enable communication between devices located in different voltage regions. [0003] Usually, the drain terminal of the voltage converter is close to the high-voltage device, and the drain terminal of the voltage converter and the high-voltage device are at the same high voltage, and the high-voltage isolation ring with a withstand voltage of more than 600 volts connects the voltage converter at the same high voltag...

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Problems solved by technology

[0005] This application provides a high-voltage isolation structure and its manufacturing method, which can solve the problem in the related art that the high-voltage circuit cannot be effectively isolated, or even penetrates to cause large leakage

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