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Fin-type field effect transistor, electronic device and preparation method of fin-type field effect transistor

A technology of field effect transistors and transistors, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as diffusion, source-drain over-cutting, source-drain doping, etc., to reduce thermal budget, prevent over-cutting phenomenon, Reduce the effect of fluctuation problems

Pending Publication Date: 2022-01-11
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Embodiments of the present invention provide a fin field effect transistor and its preparation method to solve the problems of source and drain overcut and source and drain doping diffusion to the channel in the prior art

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  • Fin-type field effect transistor, electronic device and preparation method of fin-type field effect transistor
  • Fin-type field effect transistor, electronic device and preparation method of fin-type field effect transistor
  • Fin-type field effect transistor, electronic device and preparation method of fin-type field effect transistor

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preparation example Construction

[0040] At least one embodiment of the present invention provides a fin field effect transistor and a manufacturing method thereof. The fin field effect transistor includes: a substrate, a fin, a barrier and a gate. The fin field effect transistor has a fin protruding above the substrate, and the fin includes a channel portion, a source portion and a drain portion, the channel portion being disposed between the source portion and the drain portion. The blocking portion of the FinFET is disposed between the source portion and the substrate, and between the drain portion and the substrate. In addition, the gate of the fin field effect transistor is disposed to cover at least two side surfaces of the channel portion of the fin.

[0041] The fin field effect transistor in at least one embodiment of the present invention can avoid the fluctuation problem caused by the uncertainty of source-drain overshoot, effectively alleviate the problem of leakage current under the fin, and impr...

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Abstract

The invention provides a fin-type field effect transistor, an electronic device and a preparation method of the fin-type field effect transistor. The fin-type field effect transistor comprises: a substrate; a fin part, wherein the fin part protrudes out of the substrate, the fin part comprises a channel part, a source electrode part and a drain electrode part, and the channel part is arranged between the source electrode part and the drain electrode part; a blocking portion disposed in at least one of between the source portion and the substrate and between the drain portion and the substrate; and a gate electrode disposed to cover at least two side surfaces of the channel portion of the fin portion. The fin-type field effect transistor provided by the invention has the technical effects of reducing off-state leakage current, reducing process complexity and reducing manufacturing cost.

Description

technical field [0001] The invention relates to a fin field effect transistor, an electronic device and a preparation method thereof. Background technique [0002] In the field of semiconductors, since the integration density of various electronic components continues to increase following the guidance of Moore's Law, more electronic components can be integrated into a given area, thereby achieving continuous reduction in the size of semiconductor devices. However, as the device size enters the nanometer level, the small size effect becomes more and more serious, such as the short-channel effect (Short-channelEffect) and other problems greatly limit the continued development of planar MOSFETs in size reduction. In order to solve this problem, a fin field-effect transistor (Fin Field-Effect Transistor, FinFET) is proposed. At present, fin field effect transistor devices are more and more commonly used in integrated circuits. The fin field effect transistor device has a thre...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/78H01L21/336
CPCH01L29/785H01L29/66795H01L29/0638
Inventor 王欣鹤张志刚唐建石高滨吴华强钱鹤
Owner TSINGHUA UNIV
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