Deep ultraviolet light emitting diode structure and preparation method thereof
A light-emitting diode, deep ultraviolet technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of difficulty in forming N-type ohmic contacts, and achieve the effects of low cost, elimination of surface states, and repair of etching damage
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0038] The application provides a method for preparing a deep ultraviolet light-emitting diode, comprising the steps of:
[0039] S1: A buffer layer, an N-type AlGaN layer, a multi-quantum well layer, and a P-type layer are sequentially grown on an epitaxial substrate to obtain an AlGaN-based epitaxial wafer.
[0040] Specifically, the material of the epitaxial substrate can be sapphire, SiC or silicon substrate;
[0041] The buffer layer can be AlN or AlGaN materials with different Al components;
[0042] The Al composition of the N-type AlGaN layer can be set to 0.5-1;
[0043] The multi-quantum well layer may be an AlGaN layer of at least two different Al compositions;
[0044] The P-type layer may be a P-type AlGaN layer or a P-type GaN layer.
[0045] S2: Etch an N-type mesa structure along the P-type layer of the AlGaN-based epitaxial wafer to the N-type AlGaN layer;
[0046] S3: Depositing an insertion thin film on the N-type AlGaN layer mesa structure and forming a...
Embodiment 1
[0082] The deep ultraviolet light-emitting diode provided by this embodiment, such as Figure 1 to Figure 2 shown, including:
[0083] A silicon substrate 1, an AlN buffer layer 2, an N-type AlGaN layer 3 with a mesa structure having an Al composition of 0.6, an AlGaN multi-quantum well layer 4, a P-type AlGaN layer 5, and an N-type AlGaN layer arranged in sequence from bottom to top 3 is provided with an N-type titanium-aluminum alloy metal electrode 7 and a P-type nickel-gold alloy metal electrode 8 is provided on the P-type layer 5, between the N-type AlGaN layer 3 mesa structure region and the N-type metal electrode 7 A discontinuous silicon nitride micro-nano pattern 61 is provided with a thickness of 10 nm and a ratio of Si to N of 8. The micro-nano pattern is specifically an irregular three-dimensional island structure, and the structural schematic diagram of the irregular three-dimensional island structure is as follows figure 2 shown.
[0084] The three-dimensiona...
Embodiment 2
[0086] The deep ultraviolet light-emitting diode provided by this embodiment, such as Figure 3 to Figure 4 shown, including:
[0087]A sapphire substrate 1, an AlN / AlGaN superlattice buffer layer 2, an N-type AlGaN layer 3 with a mesa structure having an Al composition of 1, an AlGaN multi-quantum well layer 4, a P-type AlGaN layer 5, and An N-type titanium metal electrode 7 is arranged on the mesa structure of the N-type AlGaN layer 3 and a P-type nickel metal electrode 8 is arranged on the P-type layer 5, between the mesa structure region of the N-type AlGaN layer 3 and the N-type metal electrode 7 Discontinuous film-forming silicon nitride micro-nano patterns 61 are disposed between them, the thickness of which is 5 nm, and the ratio of Si to N is 10. The micro-nano pattern is specifically an irregular nanorod structure, and the structural schematic diagram of the irregular nanorod structure is as follows Figure 4 shown.
[0088] The nanorod structure is an irregular s...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| height | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More