Semiconductor device

Abstract

Embodiments of a semiconductor device, such as a complementary bipolar junction transistor structure, are provided. A semiconductor device according to the present disclosure includes a dielectric layer and a fin-like structure disposed on the dielectric layer. The fin-shaped structure includes a first p-type doped region, a second p-type doped region, and a third p-type doped region, and a first n-type doped region, a second n-type doped region, and a third n-type doped region, which are interleaved among the first p-type doped region, the second p-type doped region, and the third p-type doped region. The first p-type doped region, the third p-type doped region and the third n-type doped region are electrically coupled to a first potential. The second p-type doped region, the first n-type doped region and the second n-type doped region are electrically coupled to a second potential different from the first potential.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly to complementary bipolar junction transistors fabricated together with multi-bridge channel (MBC) transistors as temperature sensors. Background technique [0002] The electronics industry is faced with an increasing demand for smaller and faster electronic devices that simultaneously need to support a large number of increasingly complex and sophisticated functions. Accordingly, there is a continuing trend in the semiconductor industry to manufacture low cost, high performance, and low power integrated circuits (ICs). Most of these goals have thus far been achieved by shrinking the size (eg, minimum feature size) of semiconductor ICs, thereby improving process efficiency and reducing associated costs. However, such scaling down also increases the complexity of the semiconductor process. Accordingly, similar advances in semiconductor processes and technologies are required ...

AI Technical Summary

Problems solved by technology

Known temperature sensors may require additional process operations and cannot be placed close enough to hot spots in integrated circuit (IC) devices

While these known temperature sensors are generally adequate for the intended purpose, they are not completely satisfactory in all respects.

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