SEMICONDUCTOR DEVICE and NONVOLATILE MEMORY DEVICE INCLUDING THE SAME

Abstract

The invention provides a semiconductor device and a nonvolatile memory device. The semiconductor device includes: a substrate; an element isolation film defining a first active region in the substrate; a first gate electrode on the first active region; a first source / drain region inside the first active region between the element isolation film and the first gate electrode; and an isolation contact portion extending in a vertical direction intersecting an upper surface of the substrate in the element isolation film. The isolation contact is configured to be applied with a voltage.

Description

technical field [0001] The present disclosure relates to semiconductor devices. More specifically, the present disclosure relates to a semiconductor device including an element isolation film. Background technique [0002] With the development trend of electronic products to be light, thin, short and small, the demand for high integration of semiconductor devices is increasing. Since the size of components (eg, transistors) included in the semiconductor device is also reduced as the semiconductor device becomes more highly integrated, there may be a problem that leakage current occurs. Therefore, it may be advantageous to control the leakage current of semiconductor devices to improve the performance and reliability of the semiconductor devices. [0003] On the other hand, there is a need for semiconductor devices capable of storing large volumes of data in electronic systems using data storage. Therefore, methods for increasing the data storage capacity of semiconductor ...

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Problems solved by technology

Since the size of components (for example, transistors) included in a semiconductor device is also reduced as semiconductor devices become more highly integrated, there may be a problem that leakage current occurs

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