Atomic layer deposition device and spray plate thereof

A technology of atomic layer deposition and spray plate, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problem that the uniformity of wafer coating cannot meet the standard, and the thickness of the wafer surface film cannot meet the design requirements, etc. problem, to achieve the effect of optimizing spatial uniformity, improving uniformity, and improving uniformity

Pending Publication Date: 2022-03-01
JIANGSU MICROVIA NANO EQUIP TECH CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the long-term research and development process, the inventor of the present application found that the uniformity of the wafer coating cann...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Atomic layer deposition device and spray plate thereof
  • Atomic layer deposition device and spray plate thereof
  • Atomic layer deposition device and spray plate thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0061] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0062] It should be noted that when an element is referred to as being “disposed on” another element, it may be directly on the other element or there may be another element in between. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or it may be present intervening with the other element. The terms "vertical," "horizontal," "left," "right," and similar expressions are used ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an atomic layer deposition device and a spraying plate thereof. The spraying plate is used for injecting gas into a reaction cavity of the atomic layer deposition device. The spraying plate comprises at least one main pipeline; the extension direction of the branch pipeline intersects with the extension direction of the main pipeline, the branch pipeline is communicated with the main pipeline, the diameter of the branch pipeline is smaller than or equal to that of the main pipeline, and the length of the branch pipeline is smaller than that of the main pipeline; and the plurality of spraying holes are formed in the branch pipelines, and the spraying holes face the reaction cavity. According to the atomic layer deposition device and the spraying plate thereof, the coating uniformity of the product to be coated can be improved.

Description

technical field [0001] The present application relates to the technical field of vacuum coating, in particular to an atomic layer deposition device and a shower plate thereof. Background technique [0002] Atomic layer deposition (ALD) technology is a thin film deposition technology based on surface chemical vapor phase reaction. It introduces two or more chemical gas precursors into the reaction chamber separately, so that each precursor undergoes a fully saturated surface chemical reaction on the substrate surface, and blows the gas phase reaction products and unreacted gas after the saturated surface reaction. Therefore, the substance can be plated on the surface of the substrate in the form of a monoatomic film, and the thickness and uniformity of the deposited film can be precisely controlled within the thickness of the atomic layer. Different from traditional thin film deposition techniques, such as Physical Vapor Deposition (Physical Vapor Deposition, PVD) and Chemic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/455
CPCC23C16/45548C23C16/45544
Inventor 李翔袁红霞韩萍邹嘉宸左敏胡磊黎微明
Owner JIANGSU MICROVIA NANO EQUIP TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap