Data reading method of non-volatile memory array with pairing structure

Abstract

According to the data reading method of the non-volatile storage array with the pairing structure, in a first data reading period, zero-volt voltage is applied to a word line of a first storage tube of a selected storage unit, and starting voltage is applied to a word line of a second storage tube of the selected storage unit; a compensation positive voltage is applied to a word line of a first storage tube of a non-selected storage unit different from the selected storage unit, and a turn-off negative voltage is applied to a word line of a second storage tube of the non-selected storage unit; in a second data reading period, zero-volt voltage is applied to the word line of the second storage tube of the selected storage unit, turn-on voltage is applied to the word line of the first storage tube of the selected storage unit, compensation positive voltage is applied to the word line of the second storage tube of the non-selected storage unit, and turn-off negative voltage is applied to the word line of the first storage tube of the non-selected storage unit. Through the cooperation of the two data reading cycles, the soft erasure effect generated by turning off the negative voltage can be compensated by compensating the soft programming effect generated by the positive voltage, so that the probability of reading interference is reduced under the condition of not increasing additional circuits and reading cycle time.

Description

technical field [0001] The invention relates to the field of storage technology, in particular to a data reading method of a pair-structure non-volatile storage array. Background technique [0002] For a non-volatile (or non-volatile, Nonvolatile) semiconductor memory chip, after data is written, it can still maintain the stored data information even if it is powered off. Generally speaking, a non-volatile memory (that is, a non-volatile memory array) has a plurality of memory tubes arranged in rows and columns. In the process of actually reading non-volatile memory data, in order to identify the data stored in the selected storage tube, a voltage of corresponding magnitude is usually applied to the bit line of the selected storage tube or to both the bit line and the word line at the same time. Another word line voltage will be applied to the unselected memory tubes, and the voltages applied to the selected word lines and the unselected word lines will slightly interfere w...

AI Technical Summary

Problems solved by technology

Although a single voltage applied to the word line has little influence on the data stored in the memory tube, in practical applications, the data stored in the same memory array is generally read multiple times, for example, one hundred thousand to one million The number of times data is read, and the small interference generated by each read will accumulate gradually with the increase of the number of reads, which may eventually cause changes or abnormalities in the data stored in the storage array, resulting in the read data and The stored data is inconsistent, and information reading errors occur. This phenomenon is usually called "Read Disturb" in the field of non-volatile memory.

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