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Steady state simulation method and device for phonon heat transport

A phonon, steady state technology for phonon thermal transport in semiconductors, which can solve problems such as inaccurate results and interface considerations

Pending Publication Date: 2022-03-18
INSPUR SUZHOU INTELLIGENT TECH CO LTD
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Problems solved by technology

[0004] Here, we are studying the process of phonon heat transport based on any temperature difference and in a steady state. In the process of simulating phonon heat transport using the discrete coordinate method, the problem of the interface needs to be considered. Since the simulation system The difference in materials on both sides of the middle interface also has a certain impact on the simulation results. However, the current staff does not take the interface into account during the simulation process, which leads to inaccurate simulation results.

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  • Steady state simulation method and device for phonon heat transport
  • Steady state simulation method and device for phonon heat transport
  • Steady state simulation method and device for phonon heat transport

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Embodiment Construction

[0055] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, and are not intended to limit the present application.

[0056] The application provides a steady-state simulation method for phonon heat transport, comprising the following steps:

[0057] Step 202, acquiring a first initial value set of phonon intensity and a first initial value set of phonon pseudo-intensity.

[0058] Here, the phonon intensity is the intensity value of the steady-state simulation system at the equilibrium temperature, that is, the phonon intensity has a certain relationship with the equilibrium temperature of the steady-state simulation. Therefore, the determination of the first initial value group of the ph...

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Abstract

The invention relates to a steady-state simulation method and device for phonon heat transport, computer equipment and a storage medium. The method comprises the following steps: acquiring a first initial value group of phonon intensity and a first initial value group of phonon pseudo-intensity; obtaining a plurality of different space coordinate points according to the steady-state simulation size and the space step length; calculating through a Boltzmann equation and an interface condition formula of the corresponding steady-state phonons to obtain a first intensity value group of the phonons under different space coordinate points; according to the first intensity value group of the phonons, a first equilibrium temperature value group, a first pseudo-equilibrium temperature value group and a first heat flow value group of corresponding steady-state simulation are obtained; and when the relative error of the heat flow value groups of the steady-state simulation obtained by two adjacent iterative calculations meets a preset condition, outputting a first equilibrium temperature value group, a first pseudo-equilibrium temperature value group and a first heat flow value group of the current steady-state simulation, and ending the steady-state simulation. By adopting the method, the heat transport process of phonons changing along with the space can be simulated more accurately.

Description

technical field [0001] The present application relates to the technical field of phonon heat transport in semiconductors, in particular to a steady-state simulation method, device, computer equipment and storage medium for phonon heat transport. Background technique [0002] With the development of semiconductor technology, the research on the heat transport mechanism of phonons in semiconductors can provide effective guidance for the heat dissipation optimization design of electronic devices. There are many research methods on the heat transport mechanism of phonons, and the discrete coordinate method as a The numerical method to directly solve the phonon Boltzmann equation is an important tool for the study of phonon thermal transport in semiconductors. [0003] The phonon discrete coordinate method considering the actual dispersion relationship is mainly divided into two categories: the numerical algorithm based on small temperature difference and the numerical algorithm ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/20G06F119/08
CPCG06F30/20G06F2119/08
Inventor 冉鑫
Owner INSPUR SUZHOU INTELLIGENT TECH CO LTD
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