Method for judging reliability of nand flash memory data, storage medium and storage device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- DERA CO LTD
- Publication Date
- 2022-05-13
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Abstract
Description
technical field
[0001] The invention relates to the technical field of data storage, in particular to a method for judging the reliability of NAND flash memory data, a storage medium and a storage device. Background technique
[0002] One of the characteristics of NAND flash memory is that as the use and data storage time become longer, the data stored in the flash memory is more prone to bit flips and random errors. The sources of these errors include data retention (data retention), increase in the number of erasing and writing (Program / Erase Count), read disturbance, coupling between storage cells, etc., and these factors will affect the reliability of data in NAND. Therefore, in the process of using the SSD, some data integrity technologies need to be adopted to ensure the reliability of the data. Common technologies include: ECC error correction, RAID data recovery, reread (read retry), scan rewrite technology (read scrub), data randomization, etc. The re-read technol...