Magnetoelectric storage element of ferroelectric/ferromagnetic composite film based on PMN-PT and preparation method thereof
A ferromagnetic thin film and magnetoelectric storage technology, applied in the fields of magnetic field controlled resistors, manufacturing/processing of electromagnetic devices, material selection, etc., can solve problems such as limited storage density, limited memory application, and destructive reading process , to achieve low power consumption, good ferroelectric effect
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Embodiment 1
[0042] The steps of preparing 30nm ferromagnetic film by ion beam sputtering are as follows:
[0043] 1) Clean the PMN-PT substrate with deionized water and dry it, put the substrate into the glue homogenizer, and spin-coat the photoresist solution on the surface of the substrate; set the first stage and accelerate the rotating tray to 800r / min to keep 10s; then the second stage accelerates the rotating tray to 3800r / min for 60s. Evaporate excess water to dryness on a hot plate, align the mask plate with the photolithography machine, and set the exposure time to 6s for photolithography. Mix the developer solution with water at a ratio of 1:10. Then put the exposed PMN-PT single crystal substrate into a developing solution, set a developing time of 15s, then put it into clean water for cleaning, and then bake the substrate at a temperature of 100°C.
[0044] 2) The PMN-PT single crystal piezoelectric substrate and Fe 65 co 35 The alloy target is placed in the sputtering cha...
Embodiment 2
[0048] The steps of preparing 20nm ferromagnetic film by ion beam sputtering are as follows:
[0049] 1) Clean the PMN-PT substrate with deionized water and dry it, put the substrate into the glue homogenizer, and spin-coat the photoresist solution on the surface of the substrate; set the first stage and accelerate the rotating tray to 800r / min to keep 10s; then the second stage accelerates the rotating tray to 3800r / min for 60s. Evaporate excess water to dryness on a hot plate, align the mask plate with the photolithography machine, and set the exposure time to 6s for photolithography. Mix the developer solution with water at a ratio of 1:10. Then put the exposed PMN-PT single crystal substrate into a developing solution, set a developing time of 15s, then put it into clean water for cleaning, and then bake the substrate at a temperature of 100°C.
[0050] 2) The PMN-PT single crystal piezoelectric substrate and Fe 65 co 35 The alloy target is placed in the sputtering cha...
Embodiment 3
[0053] The steps of preparing 40nm ferromagnetic film by ion beam sputtering are as follows:
[0054] 1) Clean the PMN-PT substrate with deionized water and dry it, put the substrate into the glue homogenizer, and spin-coat the photoresist solution on the surface of the substrate; set the first stage and accelerate the rotating tray to 800r / min to keep 10s; then the second stage accelerates the rotating tray to 3800r / min for 60s. Evaporate excess water to dryness on a hot plate, align the mask plate with the photolithography machine, and set the exposure time to 6s for photolithography. Mix the developer solution with water at a ratio of 1:10. Then put the exposed PMN-PT single crystal substrate into a developing solution, set a developing time of 15s, then put it into clean water for cleaning, and then bake the substrate at a temperature of 100°C.
[0055] 2) The PMN-PT single crystal piezoelectric substrate and Fe 65 co 35 The alloy target is placed in the sputtering cha...
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