Plasma reactor

Abstract

The invention provides a plasma reactor which comprises a reactor chamber, and the reactor chamber is provided with a first air exhaust ring, a second air exhaust ring, a nozzle panel and a heater. The nozzle panel is used for spraying plasma to the reactor chamber; the first air exhaust ring is matched with the second air exhaust ring; the second air exhaust ring is matched with the heater; a plurality of through holes are formed in the second air exhaust ring, and the through holes penetrate through the second air exhaust ring; and the heater is used for providing a temperature condition for plasma reaction. The plasma reactor is used for simplifying the machining process, eliminating machining dead angles, saving machining cost, facilitating replacement of process working conditions and improving the utilization rate of an air exhaust structure.

Description

technical field [0001] The invention relates to the field of semiconductor processing, in particular to a plasma reactor. Background technique [0002] The structural schematic diagram of the plasma reactor in the prior art is as figure 1 As shown, after the processing gas is input into the inner cavity, it is discharged from the exhaust hole of the pumping ring; the structural schematic diagram of the pumping ring in the prior art is shown in figure 2 As shown, it is an integrated structure. However, with the change of process conditions, the structure of the pumping ring becomes more complicated, and there are many processing dead angles. Therefore, there are problems of high processing cost and long processing cycle. In addition, when changing process conditions, The pumping ring needs to be completely replaced to meet different process requirements. Different process requirements require different pumping rings, resulting in low overall utilization of the pumping ring,...

AI Technical Summary

Problems solved by technology

[0002] The structural schematic diagram of the plasma reactor in the prior art is as figure 1 As shown, after the processing gas is input into the inner cavity, it is discharged from the exhaust hole of the pumping ring; the structural schematic diagram of the pumping ring in the prior art is shown in figure 2 As shown, it is an integrated structure. However, with the change of process conditions, the structure of the pumping ring becomes more complicated, and there are many processing dead angles. Therefore, there are problems of high processing cost and long processing cycle. In addition, when changing process conditions, The pumping ring needs to be completely replaced to meet different process requirements. Different process requirements require different pumping rings, resulting in low overall utilization of the pumping ring, and idle pumping rings will occupy unnecessary maintenance costs.

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