Semiconductor thermoelectric power generation device and preparation method thereof
A thermoelectric power generation and semiconductor technology, which is used in the manufacture of semiconductor/solid state devices, the manufacture/processing of thermoelectric devices, and electrical components. , the effect of small bonding part
Pending Publication Date: 2022-04-12
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology
[0005] In view of the above problems, the present invention provides a preparation method different from the above-mentioned thermoelectric power generation device, which is used to overcome the problem of difficult demoulding during device welding and the influence of secondary welding on welding quality
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[0032] The following is a detailed description of the present invention, but the invention is by no means limited to this embodiment.
[0033] The preparation method of the semiconductor thermoelectric power generation device provided by the present invention is as follows:
[0034] The high temperature end welding process is as follows (such as figure 2 Shown): The preparation process takes two ceramic plates, namely template 1 and alumina ceramic substrate 6, and copper electrode 2 is covered on template 1 and alumina ceramic substrate 1, and Ni metal is deposited on the copper electrode by magnetron sputtering layer 3, the flexible high-temperature-resistant Teflon tape 4 is fixed on the template 1, the copper electrode of the alumina ceramic substrate 6 is covered with SnAgCu solder 5, and the P / N type semiconductor materials are respectively discharged on the high-temperature-resistant Teflon at intervals. Tape 4, and then join the two high-temperature end ceramic plate...
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Abstract
The invention relates to a preparation method of a semiconductor thermoelectric power generation device, which comprises the following steps of: providing three ceramic plates covered with a plurality of electrode plates, and depositing a metallization layer on the surface of each electrode plate, namely a template, a high-temperature end ceramic plate and a low-temperature end ceramic plate; the flexible high-temperature-resistant adhesive film layer is positioned on the template, and then the P-type thermoelectric material and the N-type thermoelectric material are sequentially fixed at intervals; welding one end of the P-type thermoelectric material and one end of the N-type thermoelectric material to an electrode slice of the high-temperature end ceramic plate; respectively removing the template and the flexible high-temperature-resistant adhesive film layer; welding the other ends of the P-type thermoelectric material and the N-type thermoelectric material to an electrode plate of a low-temperature end ceramic plate; and after the welding is completed, welding a lead, and sealing with silica gel to obtain the semiconductor thermoelectric power generation device. The problem that demolding is difficult after a high-temperature end is welded is solved by adopting the flexible welding positioning film layer, and the quality of a secondary welding spot is improved by using welding flux with different melting points in a matched mode.
Description
technical field [0001] The invention relates to a semiconductor thermoelectric power generation device and a preparation method thereof, belonging to the technical field of thermoelectric power conversion energy conversion. Background technique [0002] At present, society’s demand for energy is increasing day by day, especially electric energy is the top priority. Thermal energy is the most common energy that exists at present. Usually, the conversion of thermal energy into electrical energy requires mechanical energy as a medium, that is, thermal energy is converted into mechanical energy, and then mechanical energy is converted into Electric energy, this conversion has caused a lot of energy loss. Thermoelectric power generation is a technology that uses the Seebeck effect to directly convert heat energy into electrical energy, saving the medium of mechanical energy and avoiding energy waste to a certain extent. [0003] Semiconductor thermoelectric power generation devi...
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Patent Timeline
Login to View More IPC IPC(8): H01L35/34H01L21/68H01L21/683H01L35/32
Inventor 姜鹏陈昀包信和
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI