Bulk acoustic wave resonator, bulk acoustic wave filter and communication device
A technology of bulk acoustic wave resonators and bulk acoustic wave filters, which is applied to electrical components, impedance networks, etc., and can solve the problem of increased horizontal package size of bulk acoustic wave resonators, bulk acoustic wave filters and communication devices, and poor structural stability of bulk acoustic wave filters and other problems, to achieve the effect of reducing the preparation cost, reducing the size and improving the quality factor
Pending Publication Date: 2022-04-12
SUZHOU HUNTERSUN ELECTRONICS CO LTD
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Problems solved by technology
Exemplarily, the horizontal cross-section of the bulk acoustic wave resonator is polygonal, and the sum of the areas of the horizontal cross-sections of the bulk acoustic wave resonator needs to be smaller than the area of the first surface 100a of the substrate 100. Therefore, if the first surface of the substrate 100 needs to If a large number of bulk acoustic wave resonators are placed in 100a, the area of the substrate 100 needs to be increased, which in turn leads to a large increase in the horizontal package size of bulk acoustic wave resonators, bulk acoustic wave filters and communication devices
And the cavity structure 001 built into the substrate 100 leads to relatively poor structural stability of the bulk acoustic wave filter
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[0065] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings but not all structures.
[0066] As mentioned in the background art above, the existing bulk acoustic wave resonator adopts a planar layout, and the bulk acoustic wave resonator composed of the bottom electrode 201, the piezoelectric layer 202 and the top electrode 203 is tiled on the first surface of the substrate 100 100a. The bulk acoustic wave resonator adopts a planar layout. If a large number of bulk acoustic wave resonators need to be placed on the first surface 100a of the substrate 100, the area of the substrate 100 needs to be ...
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The invention discloses a bulk acoustic wave resonator, a bulk acoustic wave filter and a communication device. The bulk acoustic wave resonator comprises a vertical laminated structure consisting of an inner electrode, a piezoelectric layer and an outer electrode, the vertical laminated structure of the inner electrode, the piezoelectric layer and the outer electrode is distributed in a closed ring shape or a semi-closed ring shape; the inner electrode, the piezoelectric layer and the outer electrode are arranged on the surface of the substrate, and the stacking direction of the inner electrode, the piezoelectric layer and the outer electrode is perpendicular to the thickness direction of the substrate. According to the technical scheme provided by the embodiment of the invention, the horizontal packaging sizes of the bulk acoustic wave resonator, the bulk acoustic wave filter and the communication device are reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a bulk acoustic wave resonator, a bulk acoustic wave filter and a communication device. Background technique [0002] Bulk acoustic wave resonators have the characteristics of small size, high operating frequency, low power consumption, high quality factor, and compatibility with CMOS technology. They have become important devices in the field of communication devices and are widely used. Multiple bulk acoustic wave resonators connected in series and parallel can form a bulk acoustic wave filter. [0003] figure 1 It is a top view of a bulk acoustic wave filter in the prior art. figure 2 for figure 1 Sectional view in the direction of A1-A2. see figure 1 , the existing bulk acoustic wave filter includes a substrate 100, the first surface 100a of the substrate 100 is provided with a bulk acoustic wave resonator 200a, a bulk acoustic wave resonator 200b, a bulk acousti...
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IPC IPC(8): H03H9/02H03H9/17H03H9/54H03H3/02
Inventor 丁焱昆赖志国杨清华
Owner SUZHOU HUNTERSUN ELECTRONICS CO LTD