Unlock instant, AI-driven research and patent intelligence for your innovation.

Surface acoustic wave resonance device, forming method, filtering device and radio frequency front-end device

A resonant device, surface acoustic wave technology, applied in impedance networks, electrical components, etc., can solve the problem that the Q value of the resonator needs to be improved, etc.

Active Publication Date: 2022-04-12
CHANGZHOU CHEMSEMI CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the Q value of existing resonators still needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface acoustic wave resonance device, forming method, filtering device and radio frequency front-end device
  • Surface acoustic wave resonance device, forming method, filtering device and radio frequency front-end device
  • Surface acoustic wave resonance device, forming method, filtering device and radio frequency front-end device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] As mentioned in the background, the Q value of existing resonators still needs to be improved. A detailed description will be given below in conjunction with the accompanying drawings.

[0030] figure 1 is a schematic diagram of the top view structure of a SAW resonator, figure 2 yes figure 1 The schematic diagram of the cross-sectional structure along the direction A1-A2 and the corresponding sound velocity distribution.

[0031] Please refer to figure 1 with figure 2 , the SAW resonator includes: a piezoelectric substrate 110, and the piezoelectric substrate 110 includes a bus area VI, a false finger area I, a spacer area II, an interdigital overlap area III, and a spacer area arranged in sequence along the first direction X IV. False finger area V and bus area VII; the electrode layer located on the surface of the piezoelectric substrate 110, the electrode layer includes: a bus (Bus bar) 121, a plurality of electrode strips 122 connected to the bus bar 121, an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a surface acoustic wave resonance device, a forming method, a filtering device and a radio frequency front-end device, and relates to the technical field of semiconductors, and the surface acoustic wave resonance device comprises a piezoelectric substrate which comprises a first bus region, a first spacer region, an interdigital overlapping region, a second spacer region and a second bus region which are sequentially arranged along a first direction; the particle injection parts are located in the first bus region, the first spacer region, the second spacer region and the second bus region; the electrode layer is located on the surface of the piezoelectric substrate and comprises a first bus, a second bus, a plurality of first electrode strips connected with the first bus and a plurality of second electrode strips connected with the second bus, the first electrode strips and the second electrode strips are alternately arranged in the second direction, the first electrode strips are located on the surfaces of the first interval area and the interdigital overlapping area, and the second electrode strips are located on the surfaces of the second interval area and the interdigital overlapping area. The second electrode strips are located on the surfaces of the second spacer regions and the interdigital overlapping regions. Therefore, transverse sound wave leakage can be reduced, and the parallel Q value of the surface acoustic wave resonance device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a surface acoustic wave resonance device and a forming method, a filter device and a radio frequency front-end device. Background technique [0002] The radio frequency (Radio Frequency, RF) front-end chip of wireless communication equipment includes: power amplifier (Power Amplifier, PA), antenna switch, RF filter, multiplexer (multiplexer) including duplexer (duplexer) and low noise amplifier (Low Noise Amplifier, LNA) and so on. Among them, RF filters include piezoelectric surface acoustic wave (Surface Acoustic Wave, SAW) filter, piezoelectric bulk acoustic wave (Bulk Acoustic Wave, BAW) filter, micro electromechanical system (Micro Electro Mechanical System, MEMS) filter, integrated Passive device (Integrated Passive Devices, IPD) filter, etc. [0003] The Q value of the SAW resonator is relatively high. Therefore, the RF filter based on the SAW resonator (that is, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/25H03H9/02H03H9/145
Inventor 邹雅丽王斌韩兴周建
Owner CHANGZHOU CHEMSEMI CO LTD