Method for modifying self-assembled hole transport layer by alkali metal acetate
A technology of alkali metal acetate and hole transport layer, which is applied in the direction of semiconductor devices, electrical components, photovoltaic power generation, etc., can solve the problems of expensive hole transport layer, uneven adsorption, efficiency limitation, etc., and achieve improved photoelectricity Conversion efficiency, promotion of extraction rate, effect of improving crystal quality
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Embodiment 1
[0037] (1) Spin-coat the ethanol solution of MeO-2PACz doped with sodium acetate (NaAc) on the conductive substrate of ITO (indium tin oxide), FTO (fluorine-doped tin oxide) or transparent metal electrode, the rotating speed is 4000rpm, and the time is 30s, After annealing at 100 °C for 10 min, the perovskite light absorbing layer (ABX 3 , wherein A is MA (methylamine), FA (formamidine), CS and combinations thereof, B is Sn, Pb and combinations thereof, X is I, Br or Cl and combinations thereof).
[0038] (2) Electron transport layer C60 / BCP was prepared by thermal evaporation method. The evaporation rate is controlled at
[0039] (3) Ag electrodes were prepared on the electron transport layer by thermal evaporation coating method. Before evaporation, ensure that the chamber vacuum is lower than 4×10 -6 Pa, by adjusting the current and voltage range of the power supply, the evaporation speed of the film is controlled at In between, the evaporation time is controlled so ...
Embodiment 2
[0043](1) Spin-coat the ethanol solution of MeO-2PACz doped with potassium acetate (KaAc) on the conductive substrate of ITO (indium tin oxide), FTO (fluorine-doped tin oxide) or transparent metal electrode, the rotating speed is 4000rpm, and the time is 30s, After annealing at 100 °C for 10 min, the perovskite light absorbing layer (ABX 3 , wherein A is MA (methylamine), FA (formamidine), CS and combinations thereof, B is Sn, Pb and combinations thereof, X is I, Br or Cl and combinations thereof).
[0044] (2) Electron transport layer C60 / BCP was prepared by thermal evaporation method. The evaporation rate is controlled at
[0045] (3) Ag electrodes were prepared on the electron transport layer by thermal evaporation coating method. Before evaporation, ensure that the chamber vacuum is lower than 4×10 -6 Pa, by adjusting the current and voltage range of the power supply, the evaporation speed of the film is controlled at In between, the evaporation time is controlled s...
Embodiment 3
[0049] (1) spin-coat the ethanol solution of Me-4PACz doped with sodium acetate (NaAc) on the conductive substrate of ITO (indium tin oxide), FTO (fluorine-doped tin oxide) or transparent metal electrode, the rotating speed is 4000rpm, and the time is 30s, After annealing at 100 °C for 10 min, the perovskite light absorbing layer (ABX 3 , wherein A is MA (methylamine), FA (formamidine), CS and combinations thereof, B is Sn, Pb and combinations thereof, X is I, Br or Cl and combinations thereof).
[0050] (2) Electron transport layer C60 / BCP was prepared by thermal evaporation method. The evaporation rate is controlled at
[0051] (3) Ag electrodes were prepared on the electron transport layer by thermal evaporation coating method. Before evaporation, ensure that the chamber vacuum is lower than 4×10 -6 Pa, by adjusting the current and voltage range of the power supply, the evaporation speed of the film is controlled at In between, the evaporation time is controlled so t...
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