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Method for modifying self-assembled hole transport layer by alkali metal acetate

A technology of alkali metal acetate and hole transport layer, which is applied in the direction of semiconductor devices, electrical components, photovoltaic power generation, etc., can solve the problems of expensive hole transport layer, uneven adsorption, efficiency limitation, etc., and achieve improved photoelectricity Conversion efficiency, promotion of extraction rate, effect of improving crystal quality

Pending Publication Date: 2022-04-29
ZHEJIANG ZHENENG TECHN RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (1) Some commonly used hole transport layers are expensive and have limited efficiency
[0006] (2) There is a certain amount of parasitic absorption
However, this self-assembled material also has some shortcomings that cannot be ignored, such as the thickness is too thin, it needs oxygen-containing bottom to absorb and the adsorption is uneven, which limits its further development.

Method used

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  • Method for modifying self-assembled hole transport layer by alkali metal acetate
  • Method for modifying self-assembled hole transport layer by alkali metal acetate
  • Method for modifying self-assembled hole transport layer by alkali metal acetate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] (1) Spin-coat the ethanol solution of MeO-2PACz doped with sodium acetate (NaAc) on the conductive substrate of ITO (indium tin oxide), FTO (fluorine-doped tin oxide) or transparent metal electrode, the rotating speed is 4000rpm, and the time is 30s, After annealing at 100 °C for 10 min, the perovskite light absorbing layer (ABX 3 , wherein A is MA (methylamine), FA (formamidine), CS and combinations thereof, B is Sn, Pb and combinations thereof, X is I, Br or Cl and combinations thereof).

[0038] (2) Electron transport layer C60 / BCP was prepared by thermal evaporation method. The evaporation rate is controlled at

[0039] (3) Ag electrodes were prepared on the electron transport layer by thermal evaporation coating method. Before evaporation, ensure that the chamber vacuum is lower than 4×10 -6 Pa, by adjusting the current and voltage range of the power supply, the evaporation speed of the film is controlled at In between, the evaporation time is controlled so ...

Embodiment 2

[0043](1) Spin-coat the ethanol solution of MeO-2PACz doped with potassium acetate (KaAc) on the conductive substrate of ITO (indium tin oxide), FTO (fluorine-doped tin oxide) or transparent metal electrode, the rotating speed is 4000rpm, and the time is 30s, After annealing at 100 °C for 10 min, the perovskite light absorbing layer (ABX 3 , wherein A is MA (methylamine), FA (formamidine), CS and combinations thereof, B is Sn, Pb and combinations thereof, X is I, Br or Cl and combinations thereof).

[0044] (2) Electron transport layer C60 / BCP was prepared by thermal evaporation method. The evaporation rate is controlled at

[0045] (3) Ag electrodes were prepared on the electron transport layer by thermal evaporation coating method. Before evaporation, ensure that the chamber vacuum is lower than 4×10 -6 Pa, by adjusting the current and voltage range of the power supply, the evaporation speed of the film is controlled at In between, the evaporation time is controlled s...

Embodiment 3

[0049] (1) spin-coat the ethanol solution of Me-4PACz doped with sodium acetate (NaAc) on the conductive substrate of ITO (indium tin oxide), FTO (fluorine-doped tin oxide) or transparent metal electrode, the rotating speed is 4000rpm, and the time is 30s, After annealing at 100 °C for 10 min, the perovskite light absorbing layer (ABX 3 , wherein A is MA (methylamine), FA (formamidine), CS and combinations thereof, B is Sn, Pb and combinations thereof, X is I, Br or Cl and combinations thereof).

[0050] (2) Electron transport layer C60 / BCP was prepared by thermal evaporation method. The evaporation rate is controlled at

[0051] (3) Ag electrodes were prepared on the electron transport layer by thermal evaporation coating method. Before evaporation, ensure that the chamber vacuum is lower than 4×10 -6 Pa, by adjusting the current and voltage range of the power supply, the evaporation speed of the film is controlled at In between, the evaporation time is controlled so t...

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Abstract

The invention relates to a method for modifying a self-assembly hole transport layer by alkali metal acetate. The method comprises the following steps: cleaning a transparent conductive substrate; spin-coating the precursor solution on the transparent conductive substrate at a set rotating speed for a set time length; the method has the beneficial effects that the alkali metal acetate is introduced to modify the SAMs hole transport layer, and PH test finds that SAMs are acidic and alkali metal acetate is slightly alkaline, so that H < + > in a solution can be consumed by adding alkali metal acetate, ionization balance of phosphonic acid is caused to move forward, more phosphonate radicals are ionized out, and the hole transport efficiency is improved. According to the invention, the SAMs material is used as a hole transport layer, so that the adsorption rate of the SAMs material on a transparent conductive oxide (TCO) substrate (as shown in figure 1) is improved, the optical response of a hole transport layer (HTL) interface is improved, the hole extraction rate is promoted, the crystal quality of perovskite is improved, and the photoelectric conversion efficiency of a photovoltaic cell under a working condition is improved.

Description

technical field [0001] The invention belongs to the field of photovoltaics, in particular to a method for modifying a self-assembled hole transport layer with an alkali metal acetate. Background technique [0002] In 1883, scientist Charles Fritts first prepared solar cells, which can directly convert solar energy into electrical energy. In the following century, scientists developed traditional photoelectric conversion materials such as silicon-based solar cells and compound solar cells. In 2009, Japanese scientist Miyasaka introduced the perovskite material MAPbI3 into solar cell devices. After nearly ten years of development, the efficiency of the cell has increased from the initial 3.8% to the current 25.5%. The advantages of good, high light absorption rate, simple preparation and large-area flexible preparation have become the dazzling star of the new generation of solar cells. [0003] The previous research work on perovskite solar cells mainly focused on improving ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/12H10K30/30Y02E10/549
Inventor 寿春晖陈颖孙靖淞杨熹应智琴贺海晏黄绵吉丁莞尔盛江闫宝杰叶继春
Owner ZHEJIANG ZHENENG TECHN RES INST