Substrate for liquid ejection head and liquid ejection head
A technology of liquid ejection head and liquid discharge, applied in the direction of printing, etc., can solve the problems such as the reduction of the reliability of the interlayer insulating film of the inkjet head, and achieve the effect of inhibiting dissolution
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[0042] Hereinafter, the present disclosure will be specifically described with reference to examples, but the present disclosure is not limited to these examples.
[0043] Si according to the present disclosure w o x C y N z The film-forming conditions of the film are appropriately selected from the following.
[0044] SiH 4 Gas flow: 0.02 to 0.3slm
[0045] N 2 O gas flow: 0.1 to 3slm
[0046] CH 4 Gas flow: 0.1 to 5slm
[0047] HRF power: 100 to 900W
[0048] LRF power: 8 to 500W
[0049] Pressure: 100 to 700Pa
[0050] Temperature: 300 to 450°C
[0051] By adjusting these conditions and changing the process gas SiH 4 , N 2 O and CH 4 flow ratio, Si with different composition ratios can be obtained w o x C y N z membrane. As a result, Si of levels A to K shown in Table 1 were obtained w o x C y N z membrane. In this specification, Si w o x C y N z The content ratio of each element in the film is represented by atomic percent (atomic %). Si forme...
experiment example 1
[0056] The following experiments were performed to confirm that each Si w o x C y N z Corrosion resistance of the film to ink. First, each Si is formed on a silicon substrate w o x C y N z membrane. Thereafter, it is formed with Si w o x C y N z The substrate of the film was cut to a size of 20 mm x 20 mm. The slices were dipped in 30 ml of pigment ink with a pH of about 9, heated at 60° C. and left for 72 hours to check the amount of dissolution. In the above experiment, the back and side surfaces of the substrate were protected with an ink-insoluble resin, thereby eliminating the influence of dissolution of Si exposed to the end and back surfaces of the substrate. In this experimental example, the film thickness was measured by using a spectroscopic ellipsometer.
[0057] In this experiment, Si was confirmed by examining the change in film thickness w o x C y N z Corrosion resistance of the film to ink. The results are shown in Table 2. As the standard of...
experiment example 2
[0063] The following experiments were performed to confirm that each of the above Si w o x C y N z electrical insulation of the film. First, on a silicon substrate on which a silicon thermally oxidized film with a film thickness of 1 μm is formed, a metal layer mainly made of aluminum is formed so as to have a thickness of 200 nm, and processed so as to have a size of 2.5 mm×2.5 mm, with as the first electrode. Form a Si with a thickness of 300 nm on the first electrode w o x C y N z film, and a metal layer containing aluminum as a main material was formed thereon as a second electrode. The metal film has a thickness of 200 nm and a shape of 2 mm×2 mm, and is formed so as not to protrude from a region immediately above the first electrode. Then, in Si w o x C y N z A through hole is opened in the film for making electrical contact with the first electrode. Using such samples, the amount of current was measured when a voltage of 32 V was applied between the first ...
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