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Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low step coverage, reduced step coverage, inability to accurately and stably control step coverage, etc. The effect of good surface properties

Pending Publication Date: 2022-05-13
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0002] The existing film preparation processes are dedicated to precise film thickness control, higher step coverage and better film thickness uniformity, but for some special film layers, it is necessary to , reduce the step coverage to meet the electrical requirements
[0003] At present, the low-pressure chemical vapor deposition process LPCVD can achieve lower step coverage, but cannot accurately and stably control the step coverage

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, those skilled in the art can understand that in each embodiment of the present invention, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in this application can also be realized.

[0024] Figure 1 to Figure 5 It is a structural diagram corresponding to each step of the manufacturing method of the semiconductor structure provided by the embodiment of the present invention.

[0025] refer to figure 1 and figure 2 , providing the substrate 10 and forming the first film layer 111 .

[0026] There is a groove 101 in the substrate 1...

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Abstract

The embodiment of the invention provides a semiconductor structure and a manufacturing method thereof, and the semiconductor structure comprises a substrate which is internally provided with a groove; the first film layer covers the bottom surface and the side wall of the groove; the second film layer covers the surface of the first film layer, and the step coverage rate of the second film layer is different from that of the first film layer. According to the embodiment of the invention, the multi-layer structure with the preset step coverage rate can be obtained.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] The existing film preparation processes are dedicated to precise film thickness control, higher step coverage and better film thickness uniformity, but for some special film layers, it is necessary to , reduce the step coverage to meet the electrical requirements. [0003] At present, the low-pressure chemical vapor deposition process LPCVD can achieve lower step coverage, but cannot accurately and stably control the step coverage. Contents of the invention [0004] Embodiments of the present invention provide a semiconductor structure and a manufacturing method thereof, which are beneficial to obtaining a multi-layer structure with high step coverage. [0005] In order to solve the above problems, an embodiment of the present invention provides a semiconductor s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L29/49H01L29/51H01L21/28H01L21/285
CPCH01L29/423H01L29/4966H01L29/511H01L21/28229H01L21/285H01L29/51H01L21/28H01L29/49H01L29/66477H01L21/31
Inventor 李涛
Owner CHANGXIN MEMORY TECH INC
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