Chiral molecule identification system and method based on frustrated total reflection light spin Hall effect
A technology of frustrated total reflection and chiral molecules, applied in the field of material identification, which can solve the problems of only detecting gaseous substances, destroying samples, and incapable of quantitative description.
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Embodiment 1
[0050] An optical spin Hall effect chiral molecule identification system based on frustrated total reflection, the optical path sequentially includes a pre-selection optical path, an enhanced chip structure, a post-selection optical path, and an electrical coupling element CCD;
[0051] The pre-selected optical path is used to adjust the intensity of the reflected light beam within the acceptable range of the receiving signal of the electrical coupling element CCD;
[0052] The enhanced chip structure is used to enhance the optical spin Hall effect of the reflected light beam;
[0053] The rear selection optical path is used to amplify the spin splitting of the light beam after being reflected by the enhanced chip structure and to collimate the reflected light;
[0054] The electrical coupling element CCD is used to locate the light spot and read the data of the received light intensity;
[0055] A standard cuvette is placed between the pre-selection optical path and the enha...
Embodiment 2
[0058] A method for the identification of chiral molecules based on the optical spin Hall effect based on frustrated total reflection, such as figure 2 shown, including the following steps:
[0059] S1. Construct an optical spin Hall effect chiral molecular identification system based on frustrated total reflection, and read the light intensity data;
[0060] In this embodiment, the identification system constructed in Embodiment 1 is adopted, and the specific method is as follows:
[0061] S11. Determine the concentration of the chiral molecule solution in the marked cuvette and the enhanced chip structure according to different materials;
[0062] Such as image 3 As shown, the beam spin lateral shift varies with the ratio η of the S-wave and P-wave reflection coefficients of the enhanced chip structure. The curves from top to bottom represent the specific rotation a of different substances, and its value ranges from 10°-90° °, arranged in an arithmetic sequence, from ...
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