Method for determining failed channel hole of three-dimensional memory and test sample
A technology for testing samples and memory, which is applied in the semiconductor field, can solve problems such as leakage failure, failure to help FAB, and find out the cause of failure, so as to improve speed and accuracy, reduce failure analysis time, and improve product yield and quality.
Pending Publication Date: 2022-05-24
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
[0002] During the development and mass production of 3D NAND products in related technologies, leakage failures between word lines and channel holes (CH) often occur, affecting product yield and quality
Usually for this type of failure, first locate the failure block area (Block) and word line (WL) information in the failure chip through the card test (sort test), and prepare a sample containing the failure WL, and finally use a scanning transmission electron microscope ( STEM) to observe thousands of channel holes and find out the failed channel holes connected to the leakage word line, which is not only time-consuming, but also for some cases of slight leakage and small defects, STEM can not characterize defects and find failures CH, the success rate is low, unable to help FAB find out the cause of failure in time
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[0029] The method for determining a failed channel hole of a three-dimensional memory proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0030] The following describes a method for determining a failed channel hole 2 of a three-dimensional memory according to an embodiment of the present invention with reference to the accompanying drawings.
[0031] like figure 1 As shown, the method for determining a failed channel hole 2 of a three-dimensional memory according to an embodiment of the present invention may include providing a failed chip 100 having a failed channel hole 2; 1. The failed chips 100 on both sides are thinned to prepare a test sample 10; voltage contrast analysis is performed on the channel holes of the test sample 10 to find out the channel holes with abnormal voltage contrast, and determine the Failed channel hole 2.
[0032] like figure 1 As shown, step S1 prov...
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The invention discloses a method for determining a failed channel hole of a three-dimensional memory and a test sample. The method comprises the following steps: providing a failed chip with the failed channel hole; determining a failed word line layer with electric leakage, and thinning the failed chips on the two sides of the failed word line layer to prepare a test sample; according to the method for determining the failure channel hole of the three-dimensional memory, the failure channel hole can be accurately and rapidly detected, the failure channel hole can be accurately and rapidly detected, and the failure channel hole can be accurately and rapidly detected. And the failure channel hole with slight electric leakage and small defects can be accurately detected, so that the failure reason can be timely and effectively found out, and the product success rate is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for determining a failed channel hole of a three-dimensional memory and a test sample. Background technique [0002] During the development and mass production of three-dimensional memory (3D NAND) products in the related art, leakage failure between word lines and channel holes (CH) often occurs, which affects product yield and quality. Usually for this kind of failure, the card test (sort test) is used to initially locate the failed block area (Block) and word line (WL) information in the failed chip, and prepare a sample containing the failed WL, and finally use a scanning transmission electron microscope ( STEM) observe thousands of channel holes and find out the failed channel holes connected to the leakage word line, which is not only time-consuming, but also for some slight leakage and small defects, STEM can not characterize the defects and find the failur...
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IPC IPC(8): G11C16/04G11C8/14
CPCG11C16/0483G11C8/14
Inventor 卢勤张志伟张翔宇侯大姣
Owner YANGTZE MEMORY TECH CO LTD