Full flash memory system based on ZNS solid state disk and address mapping method

A technology for solid-state drives and storage addresses, which is applied in all-flash systems and address mapping fields, and can solve the problems of not taking into account the characteristics of solid-state drives, performance loss, and aggravating the wear and tear of solid-state drives.

Active Publication Date: 2022-05-27
武汉麓谷科技有限公司
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Taking the all-flash array as an example, the RAID technology used is based on mechanical hard disks, without considering the characteristics of solid-state disks. The garbage collection problem caused by random writing of RAID stripes will introduce additional write amplification. It will also cause write amplification and cannot fully utilize the performance advantages of the all-flash system
In addition, the traditional block device interface reads and writes in units of logical blocks or sectors. The internal FTL mapping of enterprise-level SSDs is generally based on flash memory pages. This difference in access granularity will also cause performance loss and even aggravate the wear and tear of SSDs. Storage application logic has its own allocation, recovery algorithm and read / write unit, which will also cause performance loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Full flash memory system based on ZNS solid state disk and address mapping method
  • Full flash memory system based on ZNS solid state disk and address mapping method
  • Full flash memory system based on ZNS solid state disk and address mapping method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] Below, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. Further, in the following description, the description of the well-known structure and techniques is omitted to avoid unnecessarily confusing the concepts of the present disclosure.

[0042] The terms used herein are merely intended to describe specific embodiments and are not intended to limit this disclosure. The words "one", "one (species)" and "the" used herein should also include the meanings of "multiple", "multiple", unless the context expressly indicates otherwise. Further, as used herein, the term "comprising", "comprising", etc. indicates the presence of features, steps, operations and / or parts, but does not exclude the presence or addition of one or more other features, steps, operations or parts.

[0043] All t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a full flash memory system based on a ZNS solid state disk and an address mapping method, the system comprises at least one ZNS solid state disk, and the physical storage space of the at least one ZNS solid state disk comprises a mapping area and a data area; wherein the mapping area is used for storing an object FTL mapping table; the object FTL mapping table is used for establishing a mapping relation between the target object and the corresponding physical address; the target object comprises any storage system operation unit constructed on the full flash memory system; the data area is virtualized into a continuous storage address space and is used for storing data. According to the full flash memory system based on the ZNS solid state disk and the address mapping method provided by the embodiment of the invention, the problem of multi-write amplification caused by the interior of the SSD, the interior of the full flash memory system and the application can be eliminated, the mapping mode based on the object can adapt to a complex scene with mixed different loads, and meanwhile, the design of the whole storage system is simplified.

Description

Technical field [0001] The present invention relates to the ZNS solid state drive field, particularly to a ZNS solid state drive based on the all-flash system and address mapping method. Background [0002] In the era of big data, the performance of traditional mechanical hard disks can not meet the needs of enterprise-level storage due to mechanical structure problems, and the solid-state hard disks with semiconductor flash memory chips as the storage medium have brought revolutionary progress to the storage system and become a substitute for traditional disks. With the enterprise storage system itself on the data capacity and throughput of the requirements are getting higher and higher, a single solid-state drive is increasingly unable to meet the needs of the current enterprise-class storage system, all-flash storage technology, especially based on disk array technology developed from the all-flash array technology, to one or more solid-state drives, to provide large capacity,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/0679G06F3/0656G06F3/0662G06F3/0638
Inventor 刘烈超刘兴斌
Owner 武汉麓谷科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products