Full flash memory system based on ZNS solid state disk and address mapping method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 武汉麓谷科技有限公司
- Publication Date
- 2022-05-27
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Abstract
Description
Technical field
[0001] The present invention relates to the ZNS solid state drive field, particularly to a ZNS solid state drive based on the all-flash system and address mapping method. Background
[0002] In the era of big data, the performance of traditional mechanical hard disks can not meet the needs of enterprise-level storage due to mechanical structure problems, and the solid-state hard disks with semiconductor flash memory chips as the storage medium have brought revolutionary progress to the storage system and become a substitute for traditional disks. With the enterprise storage system itself on the data capacity and throughput of the requirements are getting higher and higher, a single solid-state drive is increasingly unable to meet the needs of the current enterprise-class storage system, all-flash storage technology, especially based on disk array technology developed from the all-flash array technology, to one or more solid-state drives, to provide large capacity,...