High-power IGBT (Insulated Gate Bipolar Translator) monitoring device, monitoring method and monitoring system
A monitoring device and power monitoring technology, which is applied in the direction of measuring devices, electrical devices, and measuring electric power, can solve the problem of large deviations in measurement results, real-time monitoring without temperature distribution and heat conduction, and difficulties in meeting the requirements of stability, life and Reliability and other issues, to achieve the effect of accurately locating the cause of the fault
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Embodiment 1
[0073] The present invention designs a high-power IGBT monitoring system, such as figure 1 As shown, it includes two parts: IGBT real-time temperature monitoring and driving power consumption monitoring. The system consists of a high-power IGBT monitoring device (referred to as the temperature monitoring part) responsible for real-time temperature monitoring and a high-power IGBT monitoring device (referred to as the power consumption monitoring part) responsible for real-time monitoring of power consumption.
[0074] In the power consumption monitoring part, the voltage and current of the real-time IGBT power supply are obtained through the voltage monitoring module and the current monitoring module, and the power and power factor of the drive are obtained online through algorithm analysis, and the current and voltage are converted into digital signals through the digital-to-analog conversion module. transmitted to the host computer. The relevant control instructions and dat...
Embodiment 2
[0077] The invention provides a high-power IGBT monitoring device for monitoring the temperature of the IGBT.
[0078] Temperature is the most direct physical quantity to measure whether an IGBT device will fail thermally. Most of the failure reasons for power devices are caused by high temperature. When the crimping IGBT is working normally, the chip generates a lot of heat due to energy loss, and the highest temperature of the IGBT device is the chip temperature. In order to facilitate heat dissipation, radiators are generally installed on both sides of the IGBT module and bonded with thermally conductive silica gel. The chip generates heat in the form of internal power consumption, and transfers the heat to the substrate by thermal conduction. The form is transferred to the environment, and most of the heat is directly transferred to the radiator through the substrate, and finally the heat is transferred to the air by the radiator, which constitutes a heat dissipation modul...
Embodiment 3
[0103] The invention provides a high-power IGBT monitoring device for monitoring power consumption.
[0104] According to statistics, the power semiconductor device is the most vulnerable part of the power electronic converter, and the IGBT power module is the most widely used power semiconductor device. Therefore, in order to avoid the failure of the IGBT power module from affecting the normal operation of the entire equipment or system, for the IGBT power module The monitoring of driving power is very necessary.
[0105] Since the power monitoring board is the output line for monitoring the energy-extracting power supply, according to the currently designed sub-module structure, in order to facilitate installation, the power monitoring board can be fixed above the shielding box of the energy-extracting power supply. Improvements are made, and the power monitoring board of the present invention is provided with a circuit control module and a power consumption monitoring modul...
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