Array substrate, preparation method of array substrate and display panel

Abstract

The invention provides an array substrate, a preparation method thereof and a display panel, the array substrate comprises a driving transistor, and the driving transistor comprises a grid electrode; the active layer is opposite to the grid electrode in position, the active layer comprises a first semiconductor and a second semiconductor, the second semiconductor is in contact with the first semiconductor to form a first PN junction and a second PN junction respectively, and the first PN junction corresponds to the source electrode; the source and drain electrode layer comprises a source electrode and a drain electrode; the second semiconductor is electrically connected with the source electrode and the drain electrode. According to the array substrate, the preparation method thereof and the display panel provided by the invention, the power consumption and the off-state leakage current of the driving transistor can be reduced, and the manufacturing process of the array substrate can be optimized.

Description

technical field [0001] The present application relates to the field of display, and in particular, to an array substrate, a method for preparing the array substrate, and a display panel. Background technique [0002] Thin Film Transistor (TFT), as a semiconductor switching device, can control the on and off of the active layer by inputting different electrical signals to the gate, so it is widely used in the field of semiconductor display. The structure of the thin film driving transistor includes: a gate electrode, a gate insulating layer, an active layer, a source and drain electrode and a protective layer. At present, most TFTs are unipolar N-type semiconductor drivers or P-type semiconductor drivers. N-type semiconductor materials mainly include inorganic semiconductor materials such as amorphous silicon, oxide and low-temperature polysilicon. Metal oxide thin film driving transistors are usually N-type semiconductors. It is difficult to exhibit P-type performance. Com...

AI Technical Summary

Problems solved by technology

However, the unipolar N-type semiconductor driver or P-type semiconductor driver consumes a large amount of power, has a complex process, and has a high off-state leakage current.

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