Semiconductor memory device

Abstract

Embodiments herein relate to semiconductor memory devices and methods of forming the same. A semiconductor memory device is provided. The semiconductor memory device includes a dual gate transistor and a memory cell. The memory cell is adjacent to the dual-gate transistor, wherein the memory cell and the dual-gate transistor share a common electrode.

Description

technical field [0001] The present disclosure relates generally to semiconductor devices, and more particularly to semiconductor memory devices and methods of forming the same. Background technique [0002] Semiconductor memory devices can generally be classified into volatile memory devices and non-volatile memory (NVM) devices. A resistive random access memory (RRAM) device is a type of non-volatile memory (NVM) device used in advanced computing systems, such as for processing in memory (PIM) using binary neural network (BNN) based techniques Applications and Machine Learning (ML) applications. RRAM devices are suitable for such applications because they can provide a high-density architecture with high parallel programming speed and low power consumption. [0003] However, memory devices can present multiple challenges, such as sensitivity to process variations and high latency for programming speed. High-density memory device arrays are needed to improve the accuracy ...

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Problems solved by technology

[0003] However, memory devices can present multiple challenges such as sensitivity to process variations and high latency in programming speed

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