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Programmable nonvolatile memory

A non-volatile, memory technology, applied in the field of programmable non-volatile memory, can solve the problems of unstable power supply voltage and large current consumption of the reading circuit, and achieve the effect of saving power consumption

Pending Publication Date: 2022-07-05
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The storage information of the anti-fuse type OTP memory unit can be identified and output through the anti-fuse state reading circuit. In the related art, the reading circuit in the OTP memory consumes a lot of current, which easily causes the power supply voltage to be unstable.

Method used

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Examples

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Embodiment Construction

[0031] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments, however, can be embodied in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted. Furthermore, the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0032] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, such as according to the direction of the example descri...

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PUM

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Abstract

The invention relates to the technical field of integrated circuits, and discloses a programmable non-volatile memory, which comprises an enable signal control circuit for receiving an array selection signal and an initial enable signal, an enabling control signal is output to one column of anti-fuse arrays based on the array selection signal and the initial enabling signal; the anti-fuse array comprises a reading circuit, and the reading circuit is connected with the enable signal control circuit and is configured to read data stored by the anti-fuse array according to the enable control signal; and each output circuit is connected with the reading circuit in one row of anti-fuse arrays, receives the array selection signal and is configured to output data read by the reading circuit according to the array selection signal. The array selection signal is utilized to only output the enable signal to the read circuit of the gated anti-fuse memory cell, and the read circuit of the non-gated anti-fuse memory cell is not enabled, so that the power consumption of the memory can be saved.

Description

technical field [0001] The present disclosure relates to the field of integrated circuits, and in particular, to a programmable non-volatile memory. Background technique [0002] One Time Programmable (OTP, One Time Programmable) memory has the characteristic that the storage state is not affected by power failure, and can be applied in various technical fields. The memory cells of the OTP memory can be divided into fuse OTP memory cells and anti-fuse OTP memory cells. Taking the anti-fuse type OTP memory cell as an example, when the anti-fuse type OTP memory cell is not programmed, it is in a high-impedance storage state; on the contrary, when the anti-fuse type OTP memory cell is programmed, its is a low-impedance storage state. [0003] The storage information of the anti-fuse type OTP memory cell can be identified and output by the anti-fuse state reading circuit. In the related art, the reading circuit in the OTP memory consumes a large amount of current, which is lik...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C16/10
CPCG11C16/26G11C16/10
Inventor 陈啸宸
Owner CHANGXIN MEMORY TECH INC