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Ferroelectric memory and preparation method thereof

A technology of ferroelectric memory and ferroelectric material layer, which is applied in the direction of static memory, digital memory information, information storage, etc., can solve the problems of low remnant polarization intensity, data retention time cannot meet the retention period, etc., and achieve remnant polarization intensity Improvement, data retention time is satisfied, and the effect of high polarization intensity

Pending Publication Date: 2022-07-05
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, there are still problems that need to be solved urgently in the ferroelectric memory based on doped hafnium oxide: first, the remnant polarization is low; second, the data retention time cannot meet the requirements of the retention period proposed by the industry

Method used

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  • Ferroelectric memory and preparation method thereof
  • Ferroelectric memory and preparation method thereof
  • Ferroelectric memory and preparation method thereof

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Embodiment Construction

[0035] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0036] In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first", "second" may expressly or implicitly include one or more of that feature. In the description of the present invention, "plurality" means two or more, unless otherwise expressly and specifically defined. "Several" means one or more than one, unless expressly specifically defined otherwise.

[0037] In the de...

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Abstract

The invention discloses a ferroelectric memory and a preparation method thereof, relates to the technical field of microelectronic manufacturing and memories, and aims to provide a ferroelectric memory which is relatively high in polarization intensity and has data retention time capable of meeting the retention period requirement proposed by the industry. The ferroelectric memory includes: a lower electrode; the ferroelectric material layer is formed on the lower electrode, and the interface of the lower electrode and the ferroelectric material layer is processed by NH3; and the upper electrode is formed on the ferroelectric material layer.

Description

technical field [0001] The present invention relates to the technical field of microelectronic manufacturing and memory, and in particular, to a ferroelectric memory and a preparation method thereof. Background technique [0002] Hafnium oxide is a commonly used high dielectric constant material in integrated circuit technology. The doped hafnium oxide film has ferroelectricity, which has a strong spontaneous polarization and the polarization direction can be redirected by an external electric field. Therefore, it is also It has become a ferroelectric layer material that has attracted much attention in the field of ferroelectric memory research. However, ferroelectric memories based on doped hafnium oxide still have problems that need to be solved: first, the remanent polarization is low; second, the data retention time cannot meet the requirements of the industry. SUMMARY OF THE INVENTION [0003] The purpose of the present invention is to provide a ferroelectric memory ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11507G11C11/22H10B53/30
CPCG11C11/221H10B53/30
Inventor 罗庆王博平袁鹏吕舒贤刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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