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Preparation method of low-temperature-sintered PZT95-5 piezoelectric ceramics

A PZT95, low-temperature sintering technology, applied in the low-temperature field of ceramic materials, can solve the problems of high sintering temperature and low performance, and achieve the effects of high residual polarization strength, high electrical strength and good application prospects.

Inactive Publication Date: 2017-10-20
YANTAI BRANCH NO 52 INST OF CHINA NORTH IND GRP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is in order to solve existing PZT95 / 5 ferroelectric ceramics sintering temperature too high and low performance problems such as low sintering temperature, and proposed doping cadmium oxide (CdO) and lithium carbonate (Li 2 CO 3 ) Combining the advantages of the improved mixing and sintering process to prepare PZT95 / 5 ferroelectric ceramics with a sintering temperature of 1050 °C

Method used

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  • Preparation method of low-temperature-sintered PZT95-5 piezoelectric ceramics
  • Preparation method of low-temperature-sintered PZT95-5 piezoelectric ceramics
  • Preparation method of low-temperature-sintered PZT95-5 piezoelectric ceramics

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preparation example Construction

[0037] The preparation method of the PZT95 / 5 ferroelectric ceramic material of the present invention may include:

[0038] (1) Mixed raw materials: Pb in powder form 3 O 4 , ZrO 2 , TiO 2 , Nb 2 O 5 , CdO and Li 2 CO 3 As raw materials, the ratio is stoichiometric, using absolute ethanol, zirconia balls as the medium, and mixing the raw materials: zirconia balls: deionized water with a mass ratio of 1:2:0.85, and wet ball milling for 6-10 hours ;

[0039] (2) Synthesis of niobium doped and modified and contains CdO, Li 2 CO 3 PZT95 / 5 ferroelectric ceramic powder: Pour the raw material obtained in step (1) into a container, put it into an oven and dry it, then press it, and synthesize it at a temperature ranging from 760°C to 850°C for 2 to 4 hours. Grind and pulverize the synthesized block to obtain niobium-doped modified and contain CdO, Li 2 CO 3 PZT95 / 5 ferroelectric ceramic powder;

[0040] (3) Press molding of the powder: the powder described in (2) is wetted with deionized wat...

Embodiment 1

[0046] Take Pb 3 O 4 , ZrO 2 , TiO 2 , Nb 2 O 5 , CdO and Li 2 CO 3 As raw material, press (Pb 99.5 Cd 0.005 )(Zr 0.965 Ti 0.035 )O 3 +1%wtNb 2 O 5 +0.1%wt Li 2 CO 3 Use absolute ethanol and zirconia balls as the medium to mix the raw materials: zirconia balls: deionized water = 1:2:0.85, and wet ball mill for 8 hours; pour the mixed raw materials Put it into the container and put it in the oven for drying, then press the block, and synthesize. The synthesis temperature range is 850℃ and keep for 2~4h. Grind and pulverize the synthesized block to obtain niobium-doped modified and contain CdO, Li 2 CO 3 PZT95 / 5 ferroelectric ceramic powder; the obtained powder adopts deionized water and zirconia ball as the medium, and the mass ratio of material: zirconia ball: deionized water is 1:1.5:1 after wet ball milling for 24h , Discharging and drying, adding 6.75wt% PVA for granulation forming, and pressing the split body under a pressure of 150MPa to form; put the formed sample into a b...

Embodiment 2

[0048] According to (Pb 99 Cd 0.01 )(Zr 0.965 Ti 0.035 )O 3 +1%wtNb 2 O 5 +0.15%wt Li 2 CO 3 The specific preparation process is as in Example 1. The main properties of the obtained standard tablets are: d 33 =67pC / N, Pr=46μC / cm 2 . figure 2 The microscopic morphology of the material described in this example is given, Figure 4 The hysteresis loop of the material in this example is given, Figure 5 The XRD diffraction pattern of the material in this example is given.

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Abstract

The invention relates to a ferroelectric ceramic material with high dielectric withstanding voltage, high remanent polarization, low loss and low sintering temperature, a preparation method of the ferroelectric ceramic material and a piezoelectric element prepared from the ferroelectric ceramic material. The ferroelectric ceramic material contains components as follows: Pb(1-x)Cdx(Zr0.965Ti0.035)O3(x=0-0.03)+1wt%Nb2O5+bwt%Li2CO3(PCZT95 / 5). The compact PCZT95 / 5 ferroelectric ceramic material with high dielectric withstanding voltage, high remanent polarization and low loss is prepared through addition of CdO and Li2CO3 and adjustment of proper Zr / Ti ratio under the condition of reducing the sintering temperature from 1350 DEG C to 1050 DEG C, the ferroelectric ceramic material is applicable to a multilayered PCZT95 / 5 thick-film device, the problem that mechanical strength and electric breakdown resistance of a monolithic PZT95 / 5 are not high after bonding currently is solved, and meanwhile, the ferroelectric ceramic material is greatly helpful for reliability and miniaturization of the device and has great application prospect in the aspects of industrial and national defense fields of explosive ferroelectric power supplies.

Description

Technical field [0001] The present invention relates to low-temperature technology of ceramic materials, in particular to low-temperature sintered PZT95-5 piezoelectric ceramics, a preparation method thereof, and piezoelectric elements prepared. Background technique [0002] The lead zirconate titanate piezoelectric ceramic system with a zirconium-titanium molar ratio of 95 / 5 is referred to as PZT95 / 5. Because of its small size and high energy storage density, it has always been the focus of the research on PZT piezoelectric ceramics. Especially it has important application value in explosive power supply and military components that require high stability. For example, it can be used in the power supply of neutron generator. Due to the high zirconium content, PZT95 / 5 ceramics generally require high temperature (1300℃) sintering. The lead in the system volatilizes seriously at high temperatures, resulting in inaccurate stoichiometric ratios, deterioration of final product perfor...

Claims

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Application Information

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IPC IPC(8): C04B35/491C04B35/626C04B35/64C04B41/51
CPCC04B35/491C04B35/62675C04B35/64C04B41/009C04B41/5116C04B2235/3241C04B2235/3249C04B2235/3251C04B2235/442C04B2235/602C04B2235/656C04B2235/6562C04B2235/6567
Inventor 曹剑武邢文芳周雅伟李志鹏王志强
Owner YANTAI BRANCH NO 52 INST OF CHINA NORTH IND GRP
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