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Dynamic random access memory and programming method thereof

A dynamic random access and memory technology, applied in static memory, read-only memory, digital memory information, etc., can solve the problems of large chip area and increased grain cost

Pending Publication Date: 2022-07-08
NS POLES TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The electronic fuse requires a large area, so the traditional OTP memory will occupy a large chip area, and additional processes are required to make the electronic fuse, thus increasing the die cost

Method used

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  • Dynamic random access memory and programming method thereof
  • Dynamic random access memory and programming method thereof
  • Dynamic random access memory and programming method thereof

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Embodiment Construction

[0016] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0017] The purpose of the present invention is to provide a dynamic random access memory and a programming method thereof. By using the dynamic random access memory as a one-time programmable memory, it does not need to use an electronic fuse, so the present invention can provide a small area One-time programmable memory.

[0018] In order to make the above objects, features and advantages of the present invention more clearly unders...

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Abstract

The invention relates to a dynamic random access memory and a programming method thereof. The dynamic random access memory is divided into two stages. In the first stage, a capacitor of a memory unit of the dynamic random access memory is broken down, so that the dynamic random access memory becomes a one-time programmable memory. And in the second stage, the resistance value of the punctured capacitor is reduced, so that the state data of the memory unit can be interpreted more easily. Therefore, the invention can provide a small-area one-time programmable memory.

Description

technical field [0001] The present invention relates to a dynamic random access memory (Dynamic Random Access Memory; DRAM), in particular to a dynamic random access memory used as a one-time programmable (One Time Programmable; OTP) memory and a programming method thereof. Background technique [0002] In today's IC industry, OTP memory is an important non-volatile memory. OTP memory is often used to store unmodified code or firmware. In the memory industry, OTP memory can also be used to record failed column addresses, failed row addresses, or failed bit addresses to make redundant columns, redundant rows, or redundant bits. Elements can replace these unqualified columns, unqualified rows, or unqualified bits. [0003] Traditional OTP memory uses high voltage to blow its internal electronic fuse. The electronic fuse requires a large area, so the conventional OTP memory occupies a large chip area, and additional processes are required to fabricate the electronic fuse, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C17/18G11C17/14G11C11/4094
CPCG11C17/18G11C17/146G11C11/4094G11C11/4096G11C11/401G11C17/14G11C17/165G11C16/102G11C16/26G11C5/06G11C16/24G11C16/30
Inventor 陈朝阳董明圣
Owner NS POLES TECH CORP