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Nanosecond non-destructive erasable magnetoresistive random access memory

A magnetoresistive random access, memory technology, applied in static memory, digital memory information, information storage and other directions, can solve problems such as unavailability

Pending Publication Date: 2022-07-12
IBM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, systems are protected, but some or all of them may become unavailable

Method used

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  • Nanosecond non-destructive erasable magnetoresistive random access memory
  • Nanosecond non-destructive erasable magnetoresistive random access memory
  • Nanosecond non-destructive erasable magnetoresistive random access memory

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Embodiment Construction

[0015] Some embodiments will be described in more detail with reference to the accompanying drawings, in which embodiments of the invention are shown. However, the present invention may be implemented in various ways and therefore should not be construed as limited to the embodiments disclosed herein.

[0016] It should be understood that aspects of the present invention will be described in terms of a given illustrative architecture; however, other architectures, substrate materials, and process features and steps may vary within the scope of various aspects of the present invention.

[0017] It will also be understood that when an element such as a layer, region or substrate is referred to as being "on" or "over" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly over" another element, there are no intervening elements present. It will also be u...

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Abstract

An erasable magnetoresistive random access memory (MRAM) structure and a method of manufacturing the same includes an MRAM cell disposed between a bit line circuit element and a word line circuit element, and a vertical cavity surface emitting laser (VCSEL) element disposed over the MRAM cell. The laser output of the VCSEL is directed toward the MRAM cell.

Description

Background technique [0001] The present invention generally relates to non-destructive erasable magnetoresistive random access memory (MRAM). The invention particularly relates to nanosecond non-destructive erasable MRAM structures including vertical cavity surface emitting laser elements. [0002] Computing hardware and software systems may be subject to various external attacks. Attacks can be carried out using software or directly attacking system hardware. Hardware security uses physical devices installed on the hardware of a computer system to protect the system from attack. Hardware security can be more robust than software security and can also add an additional layer of security to critical systems. Hardware security measures are often destructive in nature, with attacks blocked but hardware compromised. Thus, the system is protected, but some or all of it may become unavailable. [0003] MRAM is a type of solid-state non-volatile memory that uses tunnel magnetore...

Claims

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Application Information

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IPC IPC(8): H01L43/12
CPCG11C11/161G11C11/1675G11C11/1695G11C13/043G11C11/1657H01S5/0261H01S5/183H01S5/34313H01L23/576H01F10/3254H10B61/00H10N50/80H10N50/01H01F10/3286H01F41/34H10N50/85
Inventor A.雷兹尼切克E.R.埃瓦茨V.V.门塔B.赫克马特沙尔泰伯里
Owner IBM CORP