Wafer dividing method and dividing apparatus
A technology for splitting wafers and wafers, which is applied in the field of splitting and splitting devices of wafers, and can solve problems such as the inability to confirm that a modified layer is formed on a wafer after splitting
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[0022] Hereinafter, a method for dividing a wafer according to an embodiment of the present invention and a dividing apparatus used in the method for dividing a wafer will be described in detail with reference to the accompanying drawings.
[0023] The workpiece to which the wafer dividing method of the present embodiment is carried out is, for example, figure 1 Wafer 10 is shown. The wafer 10 is a silicon (Si) wafer, and is a wafer in which a plurality of devices 12 are formed on the front surface 10a by being divided by a plurality of intersecting lines 14 to be divided. Hereinafter, the step of forming a modified layer will be described. The converging point of the laser beam having a wavelength having transmissivity is positioned within the wafer 10 corresponding to the planned dividing line 14, and the wafer 10 is irradiated to form a starting point for dividing. Modified layer.
[0024] When this modified layer forming step is carried out, first, as figure 1 As shown,...
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