Semiconductor device and manufacturing method thereof
A semiconductor and device technology, which is applied in the field of semiconductor devices and their manufacturing, and can solve problems such as the deterioration of semiconductor device operating characteristics
Pending Publication Date: 2022-07-29
SAMSUNG ELECTRONICS CO LTD
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- Description
- Claims
- Application Information
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Problems solved by technology
Scaling of MOSFETs may lead to deterioration of operating characteristics of semiconductor devices
Method used
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[0021] Example embodiments of the inventive concepts will now be described more fully with reference to the accompanying drawings, in which example embodiments are shown.
[0022] figure 1 is a plan view illustrating a semiconductor device according to some embodiments of the inventive concept, and figure 2 is along figure 1 Cross-sectional views taken along lines I-I' and II-II'. Figure 3A and Figure 3B respectively figure 2 An enlarged cross-sectional view of part A1 and part B1.
[0023] refer to figure 1 and figure 2 , the base active pattern 102 may be disposed on the substrate 100 . The substrate 100 may be a semiconductor substrate. For example, the substrate 100 may be a silicon substrate or a silicon-on-insulator (SOI) substrate. The base active patterns 102 may protrude from the substrate 100 in a first direction D1 perpendicular to the bottom surface 100L of the substrate 100 and may extend in a second direction D2 parallel to the bottom surface 100L o...
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Abstract
A semiconductor device includes: a channel pattern on a substrate including semiconductor patterns spaced apart from each other in a first direction perpendicular to a top surface of the substrate; a gate electrode on the channel pattern, the gate electrode being disposed on an uppermost one of the semiconductor patterns and extending into a region between the semiconductor patterns; and a pair of gate spacers disposed on the uppermost semiconductor pattern, respectively, to cover opposite side surfaces of the gate electrode. Each semiconductor pattern includes germanium. Each semiconductor pattern includes a pair of first portions vertically overlapping the pair of gate spacers and a second portion between the pair of first portions. A thickness in the first direction of the pair of first portions of the uppermost semiconductor pattern is greater than a thickness in the first direction of the second portion of the uppermost semiconductor pattern.
Description
[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This patent application claims priority to Korean Patent Application No. 10-2021-0008083 filed in the Korean Intellectual Property Office on Jan. 20, 2021, the entire contents of which are hereby incorporated by reference. technical field [0003] The present disclosure relates to a semiconductor device and a method of fabricating the same, and in particular, to a semiconductor device including a field effect transistor and a method of fabricating the same. Background technique [0004] Semiconductor devices include integrated circuits including metal oxide semiconductor field effect transistors (MOSFETs). In order to meet the growing demand for semiconductor devices with small pattern sizes and reduced design rules, MOSFETs are constantly shrinking. The shrinking of the MOSFET may lead to deterioration of the operating characteristics of the semiconductor device. Therefore, various researches are being conducted to o...
Claims
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IPC IPC(8): H01L29/10H01L29/423H01L29/786H01L21/336
CPCH01L29/1033H01L29/42384H01L29/786H01L29/66742H01L29/66545H01L29/165H01L29/7848H01L29/78696H01L29/42392B82Y10/00H01L29/66439H01L29/775H01L29/0673H01L29/16H01L29/4983H01L29/0847H01L29/0665H01L29/78618H01L21/0259H01L21/02532H01L29/66553H01L29/78684
Inventor 河大元金旻奎崔道永
Owner SAMSUNG ELECTRONICS CO LTD