Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Phase change memory and preparation method thereof

A phase-change memory and phase-change storage technology, applied in semiconductor devices, electric solid-state devices, electrical components, etc., can solve problems such as limiting computer computing power, achieve flexible and controllable adjustment of material composition, reduce the probability of peeling, and improve hardness. Effect

Pending Publication Date: 2022-08-02
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the existing storage hierarchy, there is a fault in storage speed and storage capacity between Dynamic Random Access Memory (DRAM) and non-volatile memory (Flash), which limits the further improvement of computing power of computers.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase change memory and preparation method thereof
  • Phase change memory and preparation method thereof
  • Phase change memory and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The technical solutions of the present disclosure will be further elaborated below with reference to the accompanying drawings and specific embodiments of the description.

[0034] In the description of the present disclosure, it should be understood that the orientation or positional relationship indicated by the terms "length", "width", "depth", "upper", "lower", "outer", etc. is based on the drawings shown in the drawings. The orientation or positional relationship is only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present disclosure.

[0035] The basic principle of the phase change memory is: apply an electric pulse with a large signal value and a short duration (ie high and narrow) on the phase change m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a phase change memory and a preparation method thereof, the phase change memory comprises a first conductive wire, a phase change memory unit and a second conductive wire which are sequentially stacked along a first direction, the first conductive wire extends along a second direction, and the second conductive wire extends along a third direction, the first direction, the second direction and the third direction are perpendicular to one another; the phase change storage unit comprises a phase change storage layer, the phase change storage layer is made of an A-Ga-Sb-Te material, the content of A is a mol%, a is more than 0 and less than or equal to 20, the content of Ga is b mol%, b is more than 0 and less than or equal to 50, the content of Sb is c mol%, c is more than or equal to 20 and less than or equal to 90, and the content of Te is (100-a-b-c) mol%; the A element is used for regulating and controlling the circulation capability of the phase change storage unit.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and in particular, to a phase-change memory and a preparation method thereof. Background technique [0002] In the existing storage hierarchy, there is a gap in storage speed and storage capacity between Dynamic Random Access Memory (DRAM) and non-volatile memory (Flash), which limits the further improvement of the computing power of computers . To this end, a storage class memory (Storage Class Memory, SCM) whose storage speed and storage capacity are between DRAM and Flash is proposed. Phase-change memory is regarded as the most potential solution for storage-level memory, and a balance between performance and cost can be achieved through the screening of phase-change memory materials. SUMMARY OF THE INVENTION [0003] According to a first aspect of the present disclosure, there is provided a phase change memory, comprising: [0004] The first conductive line, the phase-cha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L45/00
CPCH10B63/80H10N70/011H10N70/8828
Inventor 周凌珺杨红心刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com