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Polysilicon layer forming process with deuterium during semiconductor production

A technology of polysilicon layer and manufacturing process, applied in semiconductor/solid-state device manufacturing, polycrystalline material growth, chemical instruments and methods, etc., can solve problems such as not easy to produce, unstable surface, data delay, etc.

Inactive Publication Date: 2004-07-21
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the instability of the surface, the channel region under the gate oxide layer 102 is not easy to generate, resulting in data delay phenomenon

Method used

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  • Polysilicon layer forming process with deuterium during semiconductor production
  • Polysilicon layer forming process with deuterium during semiconductor production
  • Polysilicon layer forming process with deuterium during semiconductor production

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Embodiment Construction

[0021] The semiconductor design of the present invention can be widely applied in many semiconductor designs, and can utilize many different semiconductor materials to make, when the present invention illustrates the method of the present invention with a preferred embodiment, those who are familiar with this field should have It is recognized that many steps can be changed, and materials and impurities can also be replaced, and these general replacements undoubtedly do not depart from the spirit and scope of the present invention.

[0022] Secondly, the present invention is described in detail as follows with schematic diagrams. When describing the embodiments of the present invention in detail, the cross-sectional view showing the semiconductor structure will not be partially enlarged according to the general scale in the semiconductor manufacturing process for the convenience of explanation, but it should not be used as a limiting cognition. In addition, in actual productio...

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Abstract

The present invention reveals one kind of polysilicon layer forming process with deuterium during semiconductor production. One semiconductor substrate with dielectric layer is first provided. Silane containing chlorine and deuterium is then decomposed to form polysilicon layer on the substrate.

Description

field of invention [0001] The present invention relates to a manufacturing method of a semiconductor element, in particular to a method for forming a polysilicon layer through deuterium in the semiconductor manufacturing process. Background of the invention [0002] Among semiconductor devices, a typical MOS structure is to form a gate structure on a gate oxide film. At this time, the conductor forming the gate structure is polysilicon, polysilicon, and the like. Polysilicon is a thin film widely used in the manufacture of semiconductors. Polysilicon is typically used in integrated circuits such as gate structures, interconnects, and capacitors. However, polysilicon suffers from strong high resistance. A polysilicon film is formed on the doped polysilicon film. The polysilicon film is composed of low-resistance metal silicide and can be used instead of polysilicon. Reducing the resistance of gates and interconnects results in faster integrated circuits and slower power c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/14H01L21/20H01L21/205H01L21/283H01L21/3205H01L21/768
Inventor 黄致远黄燿林林经祥范郁琪
Owner MACRONIX INT CO LTD