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Problems solved by technology
But this method has the problem that the cost of raw materials is too high due to the use of a large amount of sulfuric acid for the work
In addition, the methods and devices described in the above publications are as dangerous to work as conventional methods due to the use of strong acids at high temperatures
Method used
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no. 1 example
[0046] As a second aspect of the present invention, the first embodiment involves the use of a photoresist film removing device ( figure 1 A1) to remove the photoresist film method.
[0047] In this application, the photoresist film to be removed refers to a film composed of a photoresist material containing an organic polymer compound (where the photoresist material is used in the process of manufacturing a semiconductor device), including a film whose surface is highly The film or its surface modified by atomic doping is coated with an inorganic film during etching.
[0048] The above-mentioned substrate with a photoresist film on its surface may include, for example, a silicon wafer, a glass substrate for a liquid crystal display, a glass-reinforced epoxy resin substrate used in the manufacture of a printed circuit board, etc., but it is not particularly limited thereto, As long as it is a common substrate material for any semiconductor device fabrication.
[0049] dev...
no. 2 example
[0077] The first embodiment above shows a method and apparatus for moving the substrate itself in order to change the relative position between the substrate surface and the solution level. However, the present invention also provides another method and apparatus for changing the level of the photoresist film removal solution to control the relative position. Figure 4 A device capable of changing the level of the solution to control the relative position is shown.
[0078] Figure 4 The shown device (A2) has a basic ground and figure 1 Apparatus (A1) is shown with a similar structure (ie, the feed gas is an oxygen-containing gas and any photoresist film removal solution described in the first embodiment can be used). However, in the apparatus (A2) of the second embodiment, it is not necessary to vertically move the substrate 8 in the airtight container 7 by the substrate cassette holder apparatus 10. The reaction tank 6 in the airtight container 7 is equipped with an auto...
no. 3 example
[0082] In addition to the method and device described in the first embodiment and the second embodiment above, the present invention also provides a different method and device, which also includes a sonotrode and uses the sonotrode to contain ozone-containing gas Ultrasonic oscillation is applied to the photoresist film removal solution and the substrate in order to increase the processing capacity.
[0083] FIG. 5 shows an example of a photoresist film removing apparatus (A3) used in the third embodiment, in which most of the components are the same as those described in the first embodiment except for the components and functions described in detail below.
[0084] The sonotrode 71 used in the device (A3) of the third embodiment may be a device known in the prior art. In FIG. 5, the ultrasonic generator 71 is close to the bottom wall of the airtight container 7, but it is not limited to this structure. As long as the ultrasonic vibration can effectively act on the photores...
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Abstract
A method of removing photoresist film with high efficiency of removal and friendliness with the environment while reducing the material consumption and the cost for the ventilation facility, and an apparatus used for the method are provided. Particularly the present invention provides a method of removing a photoresist film provided on a surface of a substrate, comprising steps of in a sealed system, disposing the substrate surface having the photoresist film to contact with a photoresist film removing solution, making ozone exist in gas phase and / or solution phase in the vicinity of the liquid surface of the photoresist film removing solution, and changing a relative position between the surface of the substrate and the liquid surface of the solution to decompose or remove the photoresist film from the substarate, characterized in that the relative position is changed continuously or intermittently within a range between a position where a bottom edge of the substrate is present above the liquid surface of the solution, and another position where a top edge of the substrate is present below the liquid surface of the solution. The present invention also provides an apparatus used for the method.
Description
technical field [0001] The present invention relates to a method for removing an organic film. Specifically, the present invention relates to a method for removing a photoresist film of an organic polymer compound used in photolithography processes such as semiconductor devices and a device used in the method. Background technique [0002] Photolithographic materials are generally used in the photolithography process for forming fine patterns and / or the subsequent etching steps for forming electrode patterns in the manufacturing process of semiconductor devices such as integrated circuits, transistors, liquid crystal devices, diodes, etc. [0003] For example, in the case of forming a silicon oxide layer on a semiconductor substrate such as a silicon substrate (it is called a silicon wafer) in a desired pattern, first a silicon oxide layer is formed on the surface of the substrate and after cleaning A photoresist material suitable for forming a desired pattern is coated on t...
Claims
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