Precision high-frequency capacitor formed in semiconductor substrate
A capacitor and semiconductor technology, applied in the manufacture of semiconductor devices, capacitors, semiconductor/solid-state devices, etc., can solve the problems of lack of precision and performance, high price, etc., and achieve the effect of low effective series resistance
Inactive Publication Date: 2004-12-29
VISHAY INTERTECHNOLOGY INC
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Problems solved by technology
Multilayer ceramic capacitors have been developed for this purpose, but their accuracy and performance lack
Film capacitors improve accuracy and performance, but are expensive
Method used
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Embodiment Construction
[0022] The principles of the invention will now be described with reference to the examples, which are intended to be illustrative only.
[0023] Figure 1A A sectional view showing a first embodiment according to the present invention. Capacitor 10 is formed on N+ silicon substrate 102 . Substrate 102 may be doped to, for example, 3 to 4×10 19 cm -3 concentration, and may have a resistivity of about 2mΩ-cm to 3mΩ-cm. A dielectric layer 104 is formed on the front surface of the substrate 102 . The dielectric layer 104 is made of SiO 2 It can be formed by thermal generation or by chemical vapor deposition (CVD). Additionally, layer 104 may be made using other dielectric materials such as nitride or a combination of oxide and nitride. The thermally generated oxide is reliable and reproducible, and can withstand electric fields up to 4MV / cm without degradation. The 3σ variability in thickness of thermally-generated oxides with a thickness greater than 0.1 micron is less th...
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A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.
Description
[0001] This invention is related to Kasem et al., Application No. 09 / 545,287, filed Apr. 7, 2000, entitled "Vertical Structure And Process For Semiconductor Wafer-Level Chip Scale Packages," which is incorporated herein by reference. technical field [0002] The present invention relates to semiconductor technology, and in particular to forming high-frequency capacitors on semiconductor substrates. Background technique [0003] The frequency used in communication technology is constantly increasing. For example, the frequency range used in cellular communication is 450MHz to 3GHz, and the frequency range used in satellite video and data transmission is 10GHz to 18GHz. [0004] These applications require precise small capacitors. Multilayer ceramic capacitors have been developed for this purpose, but their accuracy and performance are lacking. Film capacitors improve accuracy and performance, but they are expensive. [0005] ...
Claims
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IPC IPC(8): H01G4/33H01L21/02H01L21/822H01L27/02H01L27/04H01L27/06H01L27/08
CPCH01L27/0805H01L28/40H01L27/0676H01L27/0255H01L2224/13H01L2924/13091H01L2224/05573H01L2924/00014H01L2224/05009H01L2224/0557H01L2224/13022H01L2224/05548H01L24/03H01L24/05H01L2224/13024H01L2224/13025H01L2924/00H01L2224/05599
Inventor 海姆·戈德伯格西克·卢伊杰西克·科雷克Y·默罕穆德·卡塞姆哈利安托·王杰克·范登霍伊维尔
Owner VISHAY INTERTECHNOLOGY INC