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Method for making polysilicon-polysilicon/MOS stacked capacitor

A technology of stacked capacitors and polysilicon, applied in capacitors, electric solid devices, circuits, etc., can solve problems such as difficulty in making polysilicon-polysilicon capacitors

Inactive Publication Date: 2005-01-12
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, making metal-to-metal capacitors is far more difficult than making polysilicon-polysilicon capacitors

Method used

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  • Method for making polysilicon-polysilicon/MOS stacked capacitor
  • Method for making polysilicon-polysilicon/MOS stacked capacitor
  • Method for making polysilicon-polysilicon/MOS stacked capacitor

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Embodiment Construction

[0038] Referring now to the accompanying drawings of this application, the present invention providing a polysilicon-polysilicon / MOS stack capacitor and a method of making the same will now be described in more detail. It is to be noted that like and corresponding components are denoted by like reference numerals in the drawings.

[0039] First refer to Figure 4 , which shows a basic structure of the polysilicon-polysilicon / MOS stack capacitor of the present invention. It is to be noted that the stacked capacitor shown in the figure represents a device region in a BiCMOS device. Other device areas including bipolar device area and CMOS device area can be used with Figure 4 The polysilicon-polysilicon / MOS stacked capacitors shown are fabricated in contiguous contact. For simplicity, other device regions of the BiCMOS structure have been omitted.

[0040] Specifically, Figure 4The polysilicon-polysilicon / MOS stacked capacitor comprises a semiconductor substrate 10 includ...

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Abstract

A stacked Poly-Poly / MOS capacitor useful as a component in a BiCMOS device comprising a semiconductor substrate having a region of a first conductivity-type formed in a surface thereof; a gate oxide formed on said semiconductor substrate overlaying said region of first conductivity-type; a first polysilicon layer formed on at least said gate oxide layer, said first polysilicon layer being doped with an N or P-type dopant; a dielectric layer formed on said first polysilicon layer; and a second polysilicon layer formed on said dielectric layer, said second polysilicon layer being doped with the same or different dopant as the first polysilicon layer.

Description

technical field [0001] This invention relates to BiCMOS, i.e. Bipolar and Complementary Metal Oxide Semiconductor (CMOS) devices, and in particular to devices whose capacitor elements comprise Poly-Poly / Metal Oxide Semiconductor (MOS) stack capacitors BiCMOS devices. The present invention also provides a method for fabricating a polysilicon-polysilicon / MOS stacked capacitor, the process of which can be combined into various BiCMOS integration schemes. Background technique [0002] In the field of semiconductor device manufacturing, CMOS (Complementary Metal Oxide Semiconductor) and BiCMOS (Bipolar Device and Complementary Metal Oxide Semiconductor) processes have been widely used to integrate highly complex analog-digital subsystems into a single on chip. In such subsystems, high precision capacitors are often required. [0003] Several types of capacitors are available, including polysilicon-polysilicon capacitors, MOS capacitors (also known in the art as diffused polysi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/04H01L21/02H01L21/822H01L21/8249H01L27/06H01L29/94
CPCH01L28/40H01L29/94H01L27/0805H01L27/06
Inventor D·D·库尔鲍赫J·S·顿恩S·A·斯特安格
Owner GLOBALFOUNDRIES INC