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Semiconductor memory

A memory and semiconductor technology, applied in the manufacturing of semiconductor devices, static memory, semiconductor/solid-state devices, etc., can solve problems such as the inability to improve product yields

Inactive Publication Date: 2005-05-25
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the yield of the product cannot be improved.

Method used

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  • Semiconductor memory
  • Semiconductor memory
  • Semiconductor memory

Examples

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Embodiment Construction

[0074] Hereinafter, the semiconductor memory device of the present invention will be described in detail with reference to the drawings.

[0075] FIG. 5 shows the main part of the first example of the semiconductor memory of the present invention.

[0076] In this example, there are a plurality of banks that can be accessed substantially at the same time (including slight deviations), and the memory unit is one bank, and a semiconductor memory whose memory unit is a row decoder is taken as an object.

[0077] In this example, the memory cell array is composed of eight subarrays 10, and one subarray 10 is arranged in one bank BANKi (i=0, 1, . . . 7). Eight banks BANK0, BANK1, ... BANK7 are arranged in a semiconductor memory (memory chip), and these banks BANK0, BANK1, ... BANK7 are arranged adjacently in the column direction.

[0078] In this example, one sub-array 10 is configured in one memory bank BANKi (i=0, 1, ... 7). Of course, it is also possible to configure one memory...

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Abstract

The semiconductor memory has 8 memory banks that can be accessed simultaneously, and two fixed spare row decoders and two indexed spare row decoders are arranged in each memory bank. The fixed fuse devices correspond to the fixed spare row decoders, and two are provided in each bank. The index fuse device has nothing to do with the index spare row decoder. For example, 8 index fuse devices are set in each storage body to store the index data, which is used to determine which memory body the index standby row decoder is associated with. correspond.

Description

technical field [0001] The present invention relates to a semiconductor memory having redundant circuits for relief of defective memory cells. Background technique [0002] In general, a semiconductor memory has redundant circuits for improving product yield. When a defective memory cell exists in a normal cell array, the redundant circuit has a function of replacing the defective memory cell with a redundant memory cell in a spare memory cell array. [0003] The most common redundant circuit now adopts the method of replacing defective memory cells with redundant memory cells in relief units (replacement units). The so-called relief unit is a collection of storage units that are replaced while replacing a defective storage unit with a redundant storage unit. Relief units generally include memory cells connected to one or more word lines (row units), and memory cells connected to one or more bit line pairs (column units). [0004] In the case of using memory cells (rows) ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/822G11C5/00G11C7/00G11C11/34G11C29/00G11C29/04H01L21/82H01L27/04
CPCG11C29/808G11C29/812G11C11/40
Inventor 永井健
Owner KK TOSHIBA
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